Biography
Professor Xiaohang Li has extensive research experience in III-nitride and III-oxide (ultra)wide bandgap semiconductors. Prior to KAUST, Li received his Bachelor degree in Applied Physics from Huazhong University of Science and Technology, China, his Master's degree in Electrical Engineering from Lehigh University, U.S., and his Ph.D. degree in Electrical Engineering from Georgia Institute of Technology, U.S.
Since joining KAUST, Li has advised more than 100 students, and led his Advanced Semiconductor Laboratory (ASL) in making many important and pioneering contributions to semiconductor research. Prof Li and his ASL team focus on the fundamental and applied research of ultrawide and wide-bandgap semiconductor materials, devices, physics and hardware. The ASL team aims to leverage these technologies to revolutionize the energy, communications, and health industries crucial for the sustainability of human society.
Research Interests
Professor Li has extensive research experience in III-nitride and III-oxide (ultra)wide bandgap semiconductors. He focuses his interdisciplinary research activities on investigating the growth, simulation, fabrication and characterization of III-nitride structures for next-generation devices. Devices of particular interest include LEDs, lasers, transistors and next-generation CMOS ICs.
