MOCVD

Kuang-Hui and Hamad filed a U.S. patent application on their ground-breaking MOCVD technologies!

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Kuang-Hui and Hamad filed a U.S. patent application on their ground-breaking MOCVD technologies!

Kuang-Hui and Hamad filed the second U.S. patent application on their ground-breaking MOCVD technologies!

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Kuang-Hui and Hamad filed the second U.S. patent application on their ground-breaking MOCVD technologies!

Kuang-Hui delivered two contributed talks on extremely high-temperature MOCVD reactors at OMVPE Conference in Santa Fe, USA!

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Kuang-Hui delivered two contributed talks on extremely high-temperature MOCVD reactors at OMVPE Conference in Santa Fe, USA!

Kuang-Hui's paper on extremely high temperature MOCVD gets accepted by Journal of Crystal Growth!

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Kuang-Hui's paper on extremely high-temperature MOCVD gets accepted by the Journal of Crystal Growth!

Haiding's paper on MOCVD growth of three phrases gets accepted by Crystal Growth & Design!

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Haiding's paper on MOCVD growth of three phrases gets accepted by Crystal Growth & Design!

Haiding Sun

Postdoctoral Research Fellow, Advanced Semiconductor Laboratory
Haiding Sun was a Postdoctoral Research Fellow working with Professor Xiaohang Li at the Advanced Semiconductor Laboratory at King Abdullah University of Science and Technology (KAUST). Education and Early Career Dr. Sun received his Ph.D. in Electrical Engineering from Boston University, Massachusetts, in the United States in 2015. His Ph.D. dissertation title was “Development of Aluminum Gallium Nitride-Based Emitters In The Form of Graded-Index Separate Confinement Heterostructure (GRINSCH)." Research Interests Dr. Sun ’s research works cover various aspects of semiconductor device designs