Events

Feb 25 - Mar 3, 2024

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  PhD Dissertation Defense - Interface engineering for GaN HEMTs

  Chuanju Wang, Ph.D. Student, Electrical and Computer Engineering

  Feb 26, 17:00 - 19:00

  B3 L5 R5209

  GaN-based electronics Metal-GaN interfaces Dielectric-GaN interfaces

  The research focuses on improving metal-GaN and dielectric-GaN interfaces for high-performance GaN-based electronics. For metal-GaN, the damage caused by e-beam evaporation was mitigated using Ti3C2Tx MXene films, achieving a record ION/IOFF current of 1013 and low subthreshold swing.

Dec 10 - Dec 17, 2023

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  From Academia to Management Consulting and Startups

  Dr. Gareth Guvanasen, Director of AI and Data Analytics Division, Partner at Terra Digital Ventures

  Dec 11, 15:00 - 16:00

  B3 L5 R5209

  In my lecture, I will share personal insights on transitioning from academia to management consulting and creating startups. I will discuss how to assess if a career in management consulting suits your goals and skills, and provide practical advice on interviewing successfully with consulting firms.

Jun 4 - Jun 11, 2023

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  Ultrawide Bandgap Semiconductors Modeling, Epitaxy, Processing, and Applications for Ultraviolet Emission and Detection

  Yi Lu, Ph.D. Student, Electrical and Computer Engineering

  Jun 8, 14:30 - 16:30

  B5 L5 R5209

  Wide bandgap III-Nitride semiconductor blue light-emitting diodes (LED) development has spawned the prestigious Nobel Prize in Physics in 2014. Building upon this success, the scope of research has expanded to ultrawide bandgap semiconductors, which possess immense potential in the realm of ultraviolet (UV) photonics. These materials have gained attention for their applicability in various areas, such as public sterilization, solar-blind UV communication, and real-time UV monitoring.

Apr 30 - May 14, 2023

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  β-Ga2O3: A robust solution for extreme environment electronics

  Vishal Khandelwal, Ph.D. Student, Electrical and Computer Engineering

  May 7, 12:00 - 13:00

  B9 L2 H2

  In this talk, I will be talking about β-Ga2O3 based monolithically integrated logic circuits and flash memory devices toward extreme environment operations. Moreover, the important challenges in material and device fabrication for realizing this technology will be discussed. Finally, I will introduce the promises of β-Ga2O3 at low-temperature (~ 4 K) operation for space electronics applications.

Apr 30 - May 7, 2023

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  Prospects for B containing III-N alloys for UVB and UVC LEDs

  Prof. Peter Parbrook, Electrical & Electronic Engineering, University College Cork

  May 3, 14:00 - 15:00

  B3 L5 R5220

  Abstract The inclusion of boron in III-Nitride semiconductors is an exciting prospect. It allow a break in the rather fixed relationship between strain, bandgap and electrical polarisation that inherently controls what can be achieved in using light emitting diodes with AlGaN. However, the addition of boron is quite challenging, leading to defects and roughening of the material, as well as difficulties in understanding of the incorporation of B in the material. In this presentation we will examine the potetnail for boron containing alloys in quantum wells, with a view to their inclusion in III
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  Modeling and Simulation of Semiconductor Equations: Insights and Applications

  Prof. Nella Rotundo, Department of Mathematics University of Florence, Italy

  May 3, 11:00 - 12:00

  B1 L4 R4102

  Abstract In this talk, we will discuss the modeling and simulation of semiconductor equations using three different formalisms. We will also describe the finite volume method and the Hybridizable Discontinuous Galerkin method as applied to semiconductor equations. These methods have proven to be highly effective in modeling semiconductor behavior, and have been used in a variety of applications such as integrated circuits, solar cells, and transistors. We will provide insights into the fundamental concepts behind these models and demonstrate their effectiveness through numerical simulations

Jan 1 - Jan 15, 2023

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  Challenges and Recent Progress on AlN Growth by the PVT Method

  Prof.Liang Wu, Shanghai University and CEO of Ultratrend Technologies Inc.

  Jan 8, 15:00 - 16:00

  B3 L3 R3334

  AlN crystals

  In this talk, an overview of the general strategies and associated sublimation reactors to grow AlN crystals by PVT method will be given. Particular interests are focused on different AlN growth strategies for large-size AlN crystal growth, and the advantages and disadvantages of these growth strategies will also be addressed in great detail.

Oct 30 - Nov 6, 2022

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  Flexible Electronics Beyond Mechanical Flexibility: Multifunctional Flexible Semiconductor Materials and Devices for Photonic, Electronic, Energy, and Sensing Applications

  Prof. Jae-Hyun Ryou, Mechanical Engineering, University of Houston

  Nov 3, 12:00 - 13:00

  B9 L3 R3223

  flexible photonic energy sensing devices

  Flexible electronics is an emerging and widely explored area. Most research groups in the area focus on fabrication processes to provide mechanical flexibility and their use in bendable and stretchable applications. Also, most semiconductors employed in flexible electronics are non-single-crystalline thin films which compromise the performance of the flexible devices.
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  Wide Bandgap Semiconductor Device Design via Machine Learning

  Rongyu Lin, Ph.D., Electrical and Computer Engineering

  Nov 2, 15:30 - 17:30

  B2 L5 R5220

  machine learning light gradient boosting machine extreme gradient boosting

  This dissertation presents novel approaches to the design of electrical and optical wide bandgap semiconductor devices, which opens new avenues for future research. It is possible that it might be used in a broad variety of sectors, including illumination, sensing, disinfection, and power devices by using TCAD and machine learning to deliver quick forecasts of the III-nitride semiconductor device.

Aug 28 - Sep 4, 2022

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  Compound Semiconductor Weekend

  Integrated Photonics Laboratory; Smart, Advanced Memory devices and Applications Laboratory; Photonics Laboratory; Advanced Semiconductor Laboratory

  Sep 3, 09:00 - Sep 5, 17:00

  B3 L5 R5209

  The Compound Semiconductor Weekend will focus on some of the most important research areas on the beautiful KAUST campus by the Red Sea. It features 18 invited and contributed oral talks and a poster competition. Semiconductor technology is a major foundation of the third and fourth Industrial Revolutions as well as the modern society. While silicon remains as the widest-employed semiconductor, compound semiconductors have emerged from lab research to becoming the second most widely used within a short period of time. This is because compound semiconductors could possess multiple superior key properties simultaneously. They include high speed, high power, and efficient light emission and absorption, as well as that they can be produced in large scale at low cost and are highly robust. As a result, they have become cornerstones of many crucial technologies including lighting, display, communication, space exploration, and electric vehicles. While semiconductor researchers are plowing deeper for those technologies, compound semiconductors attract increasing attention for future computing, memory, and quantum information science as the pursuit of Moore’s Law has slowed down dramatically when the size of silicon transistors is approaching the physical limit of a few atoms.

Jun 6 - Jun 13, 2021

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  Research on Ultrawide Bandgap Semiconductors

  Xiaohang Li, Associate Professor, Electrical and Computer Engineering

  Jun 8, 15:00 - 16:30

  KAUST

  Wide bandgap (WBG) semiconductors including GaN have demonstrated great success in lighting, display, electrification, and 5G communication due to superior properties and decades of R&D. Lately, the III-nitride and III-oxide ultrawide bandgap (UWBG) semiconductors with bandgap larger than GaN have attracted increasing attentions. They are regarded as the 4th wave of the inorganic semiconductors after the consequential Si, III-V, and WBG semiconductors. Because the UWBG along with other properties could enable electronics and photonics to operate with significantly greater power and frequency capability and at much shorter far−deep UV wavelengths, crucial for sustainability and health of the human society. Besides, they could be employed for the revolutionary quantum information science as the host and photonic platform. This seminar would cover the latest research by the Advanced Semiconductor Lab. It includes multi-disciplinary studies of growth, materials, physics, and devices of the UWBG semiconductors.

Aug 9 - Aug 16, 2020

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  Semi-talk: Efficiency Improvement of AlGaN based Deep UV emitter grown by HT-MOCVD

  Dr. Byeongchan So, Postdoctoral researcher / Ph.D. Department of Nano-Semiconductor Engineering, ​Korea Polytechnic University

  Aug 13, 15:00 - 16:00

  KAUST

  In this seminar, the approaches for improving the efficiency of AlGaN based DUV emitters will be presented. The high-temperature metal organic chemical vapor deposition system has been used to grow high-quality AlGaN based epi-layers and nanostructure on the sapphire substrate.

Jul 19 - Jul 26, 2020

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  Semi-talk: Ion beams in III-nitride research: Doping, characterisation and radiation resistant electronics

  Prof. Katharina Lorenz, Instituto Superior Técnico, University of Lisbon

  Jul 23, 16:00 - 17:30

  KAUST

  Katharina Lorenz's main research interests are the doping of WBS with optically active ions and the study of radiation effects in WBS materials for radiation detectors and radiation resistant electronics.

Jul 12 - Jul 19, 2020

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  Semi-talk: Recent advances in deep-UV photodetectors based on ultrawide band gap semiconductors

  Prof. Digbijoy Nath, Indian Institute of Science

  Jul 16, 14:30 - 16:00

  KAUST

  Brief Biography Education: PhD, Electrical Engineering, 2013, The Ohio State University, Columbus, USA. B. E. (Hons), Electrical & Electronics Engineering, 2008, Birla Institute of Technology and Science (BITS), Pilani.

Jul 5 - Jul 12, 2020

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  Semi-talk: Characteristics of gallium oxide based wide bandgap semiconductors

  Prof. Qixin Guo, Department of Electrical and Electronic Engineering, Saga University

  Jul 9, 09:00 - 10:30

  KAUST

  Prof. Dr. Guo received B. E., M.E., and Dr. E degrees in electronic engineering from Toyohashi University of Technology in 1990, 1992, and 1996, respectively. He is currently a Professor of Department of Electrical and Electronic Engineering, Saga University as well as Director of Saga University Synchrotron Light Application Center. His research interests include epitaxial growth and characterization of semiconductor materials. Prof. Guo has published more than 300 papers in scientific journals including Nature Communications, Advanced Materials, Physical Review B, and Applied Physics Letters with more than 7200 citations (h-index: 43).

Jun 28 - Jul 5, 2020

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  Semi-talk: Wearable Textile Electronics for Personalized Health Care

  Jun Chen, Department of Bioengineering, University of California Los Angeles

  Jun 29, 19:00 - 20:30

  KAUST

  Dr. Jun Chen is currently an assistant professor in the Department of Bioengineering, University of California, Los Angeles. His current research focuses on nanotechnology and bioelectronics for energy, sensing, environment and therapy applications in the form of smart textiles, wearables, and body area sensor networks.

Jun 14 - Jun 21, 2020

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  Semi-talk: MOCVD epitaxial growth and device fabrication of GaN-based laser diodes: from visible to ultraviolet

  Prof Ping Chen, Institute of Semiconductor, Chinese Academy of Sciences

  Jun 16, 16:00 - 17:00

  KAUST

  Dr. Ping Chen now works as a full Professor in the Institute of Semiconductors, Chinese Academy of Sciences (Beijing China). He received his bachelor’s degree of Physics from the University of Science and Technology of China (USTC) in 2003, and doctor’s degree of Microelectronics and Solid State Electronics from the Graduate School in University of Chinese Academy of Sciences in 2008. He worked in Georgia Institute of Technology (Atlanta, GA) as a Visiting Scholar from 2017 to 2019.

Jun 7 - Jun 14, 2020

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  Semi-talk: Low Cost Photonics

  Dr. Naresh Chand, Life Fellow of IEEE, Associate Vice President, Chapter Relations of the IEEE Photonics Society

  Jun 9, 16:00 - 17:30

  KAUST

  Dr. Naresh Chand is a Life Fellow of IEEE, Associate Vice President, Chapter Relations of the IEEE Photonics Society, and the Chair, Photonics Society, North Jersey Chapter. Dr. Naresh Chand was previously with US R&D Center of Huawei Technologies in NJ in 2011-2019 where he was working on developing low-cost advanced technologies for Ultra Broadband Optical Access Networks. Prior to this, he worked for BAE Systems (2003-11), Agere Systems and AT&T/Lucent Bell Laboratories (1986-2003), and Dept of Electronics, Government of India (1974-79).

May 31 - Jun 7, 2020

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  Semi-talk: Deep UV photodetectors based on Ga2O3 thin films grown on sapphire and muscovite mica

  Prof. Rajendra Singh, Indian Institute of Technology Delhi

  Jun 5, 16:00 - 17:30

  KAUST

  Dr. Rajendra Singh is presently a Professor at the Department of Physics, IIT Delhi. He did M.Sc. (Physics) from D.B.S. College, Dehra Dun (affiliated to H.N.B. Garhwal University) in 1995. After that he joined Inter University Accelerator Centre (formerly Nuclear Science Centre), New Delhi for Ph.D. His Ph.D. work was related to the study of the effect of swift heavy ion irradiation on electrical properties of Si and GaAs. He completed his Ph.D. in 2001 with degree from Jawaharlal Nehru University, New Delhi. He then joined Walter Schottky Institute (WSI), Technical University of Munich (TUM), Germany as a post doctoral fellow. There he worked on the design, fabrication and characterization of InP-based heterojunction bipolar transistors (HBTs). He extensively used Class 100 Cleanroom facilities at WSI working on various processing tools such as photolithography, wet etching, reactive ion etching, UHV metallization and rapid thermal annealing. In January 2004 he joined the Max Planck Institute of Microstructure Physics, Halle, Germany as a post doctoral fellow. There he worked in the area of direct wafer bonding and layer splitting of semiconductors for the fabrication of silicon-on-insulator (SOI) and strained silicon-on-insulator (sSOI). He worked in a Class 10 Cleanroom facility at MPI Halle using processing tools such as wet benches, wafer bonding system, plasma enhanced chemical vapour deposition (PECVD) and annealing furnaces.

May 24 - May 31, 2020

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  Semi-Talk: III-Nitride Nanowire Light-Emitting Diodes on Silicon and Patterned Substrates

  Prof Hieu Nguyen, Electrical and Computer Engineering, New Jersey Institute of Technology

  May 29, 18:00 - 19:00

  KAUST

  Prof. Hieu Nguyen received the B.S. degree in Physics from Vietnam National University in Ho Chi Minh City, Vietnam (2005), the M.S. degree in Electronics Engineering from Ajou University, South Korea (2009), and the PhD. degree in Electrical Engineering from McGill University, Canada (2012). In September 2014, he joined the Electrical and Computer Engineering Department, New Jersey Institute of Technology. He has authored/co-authored 1 book chapter, 1 patent, 48 journal articles, and more than 70 conference presentations.

May 17 - May 24, 2020

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  Semi-Talk: Role of 3D chemical imaging in advancing wide band gap technology

  Prof. Baishakhi Mazumder, Department of Materials Design and Innovation, School of Engineering and Applied Sciences, University at Buffalo

  May 22, 16:00 - 17:00

  KAUST

  No summary is available.

May 10 - May 17, 2020

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  Semi-Talk: III-Nitride Semiconductor Photonics and Nanoelectronics

  Prof. Jing Zhang, Electrical and Microelectronic Engineering, Rochester Institute of Technology

  May 15, 21:00 - 22:00

  KAUST

  Dr. Jing Zhang is currently the Kate Gleason Endowed Assistant Professor in the Department of Electrical and Microelectronic Engineering at Rochester Institute of Technology. She obtained B.S. degree in Electronic Science and Technology from Huazhong University of Science and Technology (2009), and Ph.D. degree in Electrical Engineering from Lehigh University (2013). Dr. Zhang’s research focuses on developing highly efficient III-Nitride and GaO semiconductor based photonic, optoelectronic, and electronic devices. Her research group is working on the development of novel quantum well active regions and substrates for enabling high-performance ultraviolet and visible LEDs/ lasers, as well as engineering of advanced device concepts for nanoelectronics.

May 3 - May 10, 2020

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  Introduction to Faculty Positions of Electrical Engineering Program at KAUST

  May 9, 21:00 - 22:00

  KAUST

  Abstract As a fast-growing program, we constantly look for exceptional researchers to join EE as faculty. We are having a webinar at 6pm GMT/2pm US EST/11am US PST on May 9 Saturday to introduce the EE program and KAUST. Candidates at all levels are welcome including senior PhD students, postdocs, and research scientists. Time: 6pm GMT/2pm US EST/11am US PST on May 9 Saturday The KAUST story is a remarkable one. Founded in 2009 with a substantial endowment, KAUST was created as a model for international academic innovation & research excellence, and an active contributor to the economic

Apr 26 - May 3, 2020

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  Semi-Talk: Multifunctional Flexible Semiconductor Materials and Devices for Photonic, Electronic, Energy, and Sensing Applications

  Prof. Jae-Hyun Ryou, Mechanical Engineering, Texas Center for Superconducitity

  May 1, 16:00 - 17:00

  KAUST

  Brief Biography Prof. Jae-Hyun Ryou is an Associate Professor of Mechanical Engineering Also affiliate with Materials Science and Engineering Program, Texas Center for Superconducitity (TcSUH), and Advanced Manufacturing Institute (AMI) Education and experience: Ph.D. in Materials Science and Engineering, University of Texas at Austin M.S. and B.S. in Metallurgical Engineering, Yonsei University, Seoul, Korea Honeywell Technology Center Center for Compound Semiconductors at Georgia Institute of Technology Research: Current research interests: semiconductor materials, devices, and

Nov 24 - Dec 1, 2019

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  KAUST-Asia Wide Bandgap Semiconductor Workshop

  Nov 29, 08:00 - Nov 30, 18:00

  KAUST Main Library L3 R3118

  The fast-developing wide bandgap semiconductor technologies have created hundred-billion-dollar market globally and are crucial for numerous critical areas in Saudi Arabia including water security, lighting, power supply, communication, and nuclear management. This workshop features distinguished speakers from more than 15 leading research institutions and a poster competition. It will serve as a bridge to strengthen the connections of KAUST with Asia for collaboration opportunities in research, development, and commercialization of wide bandgap semiconductor technologies. View the agenda here.
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  Plasmonics in wide-band-gap semiconductor materials

  Prof. Jing Li, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University

  Nov 27, 16:30 - 17:30

  B3 L2 R2255

  Recently, surface plasmon resonance (SPR) effect has been widely applied in wide-band-gap semiconductor materials (e.g. GaN, ZnO or TiN etc.) for emission enhancement, absorption regulation, sensitive bio- or chemical detections and so on. In this talk, different metal (Ag or Al) nanostructures were introduced into and successfully fabricated on several kinds of wide-band-gap semiconductor materials, including ZnO, AlGaN, TiN, and h-BN by template-based nanosphere lithography method and deposition techniques.