Ultrawide bandgap materials

Tingang Liu

Ph.D. Student, Electrical and Computer Engineering

Ultrawide bandgap materials AlN epitaxy power devices

Tingang Liu is a Ph.D. student at the Advanced Semiconductor Laboratory, focusing on ultrawide bandgap semiconductors especially AlN epitaxy by MOCVD and power device fabrications.

Haicheng Cao

Postdoctoral Research Fellow, Applied Mathematics and Computational Sciences

Ultrawide bandgap materials semiconductor device

Dhanu Chettri

Ph.D. Student, Electrical and Computer Engineering

Ultrawide bandgap materials Gallium oxide Aluminium nitride Transistors

Dhanu Chettri is a Ph.D. candidate at the KAUST Advanced Semiconductor Laboratory under the supervision of Professor Xiaohang Li. Before joining KAUST, he worked as a senior project fellow at Council of Scientific and Industrial Research-Central Electronics Engineering Research Institute (CSIR-CEERI). Dhanu holds a master’s degree in electronic and communication engineering from Manipur University, India. Research Interests Dhanu's research interests include ultrawide bandgap semiconductor materials, specifically Ga 2O 3 and AlN. His work focuses on the fabrication and characterization of