Ultrawide bandgap materials

Ultrawide Bandgap Nano Devices

Glen Isaac Maciel García, Ph.D. Student, Applied Physics

Jan 25, 12:00 - 13:00

B9 L2 R2325

Ultrawide bandgap materials nano-engineering

This seminar explores how nanoscale device architectures can unlock new functionalities in ultrawide bandgap (UWBG) materials beyond conventional applications.

Yan Wang

Ph.D. Student, Photonics Laboratory

Photonics and optoelectronics Ultrawide bandgap materials

M.S./Ph.D. in Electrical Engineering at King Abdullah University of Science and Technology (KAUST), Saudi Arabia, Aug. 2024- present BEng. in Communication Engineering at University of Electronic Science and Technology of China (UESTC), Chengdu, China, Sept. 2019 - Jun. 2024

Tingang Liu

Ph.D. Student, Electrical and Computer Engineering

Ultrawide bandgap materials AlN epitaxy power devices

Tingang Liu is a Ph.D. student at the Advanced Semiconductor Laboratory, focusing on ultrawide bandgap semiconductors especially AlN epitaxy by MOCVD and power device fabrications.

Glen Isaac Maciel García

Ph.D. Student, Applied Physics

advanced semiconductors Ultrawide bandgap materials nano-engineering

Haicheng Cao

Postdoctoral Research Fellow, Applied Mathematics and Computational Science

Ultrawide bandgap materials semiconductor device

KAUST-CEMSE-ECE-ASL-Dhanu-Chettri-0561

Dhanu Chettri

Ph.D. Student, Electrical and Computer Engineering

Ultrawide bandgap materials Gallium oxide Aluminium nitride Transistors