semiconductors

Nasir's APL gets published! The first demonstration of a link between the energy exchanged during the light-solid reaction and the thermodynamic entropy of nanowire structures

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In this paper,1 we investigated the photoinduced entropy of InGaN/GaN p-i-n nanowires using temperature-dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in the InGaN active regions using time-resolved photoluminescence. An increasing trend in the amount of photoinduced entropy of the system above 250 K was observed, while we observed an oscillatory trend in the generated entropy of the system below 250 K that stabilizes between 200 and 250 K. Strong exciton localization in indium-rich clusters, carrier trapping by surface defect states, and thermodynamic entropy effects were examined and related to the photocarrier dynamics. We conjectured that the amount of photoinduced entropy of the system increases as more non-radiative channels become activated and more shallowly localized carriers settle into deeply localized states; thereby, additional degrees of uncertainty related to the energy of states involved in thermionic transitions are attained.

Building crystals on a very hot surface

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An innovative chemical reactor for depositing semiconductors at very high temperatures draws on the strength of Saudi Arabia’s chemical industry.

Controlling the crystal structure of gallium oxide

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Precise control of the atomic structure of gallium oxide layers improves the development of high-power electronic devices.

Meet KAUST prospective student: Jose Manuel Taboada Vasquez

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Jose Manuel Taboada Vasquez is a B.Sc. graduate in nanoscience and nanotechnology from the National Autonomous University of Mexico (UNAM), Mexico. He will join KAUST in the fall of 2020 as a M.S./Ph.D. candidate, and member of the Advanced Semiconductor Laboratory under the supervision of Professor Xiaohang Li.

Meet KAUST prospective student: Zhiyuan Liu

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Zhiyuan Liu, 22, is an electrical engineering graduate from the University of Electronic Science and Technology of China, China. Zhiyuan will join KAUST in the fall of 2020 as a M.S./Ph.D. candidate and member of the Advanced Semiconductor Laboratory under the supervision of Professor Xiaohang Li.

Meet KAUST prospective student: Dhanu Chettri

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Dhanu Chettri holds a master’s degree in electronic and communication engineering from Manipur University, India. Before joining KAUST, he worked as a senior project fellow at Council of Scientific and Industrial Research-Central Electronics Engineering Research Institute (CSIR-CEERI). Dhanu will join KAUST this fall as a Ph.D. candidate and member of the Advanced Semiconductor Laboratory under the supervision of Professor Xiaohang Li.