Manjari's paper about surface passivation process for AlGaN/GaN HEMT is accepted by Journal of Applied Physics! (News)
Manjari's paper on temperature dependent studies of Schottky barrier diodes is accepted by Journal of Alloys and Compounds! (News)
Maocheng's work on record short UVC wavelength TE lasing from GaN is accepted by ACS Photonics! (News)
Mei's paper on carrier localization of lateral polarity junction has been accepted by Physica Status Solidi - Rapid Research Letters! (News)
Mingtao’s work about epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD was accepted by Applied Physics Letters! (News)
Mritunjay's work on high breakdown voltage normally-off Ga2O3 transistors on silicon substrates using GaN buffer is published in Applied Physics Letters. (News)
Mritunjay‘s work on NiOx Gate Dielectric for Enhanced Thermal Stability of Threshold Voltage in GaN MIS-HEMTs up to 400°C was accepted by Applied Physics Letter! (News)
Mritunjay’s work on the integration of low thermal budget In2O3 NMOS inverter and GaN HEMT for power electronics was accepted by Applied Physics Letters! (News)