KAUST招募优秀第三代半导体博士后一名！

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先进半导体实验室和光子学实验室联合招聘优秀博士后
研究新型第三代半导体材料和器件（MBE经验优先）！

Principal Investigators: Prof. Boon Ooi and Prof. Xiaohang Li
Photonics Laboratory and Advanced Semiconductor Laboratory
Electrical Engineering Program
Division of Computer, Electrical and Mathematical Sciences & Engineering (CEMSE)

有关KAUST

KAUST模仿加州理工学院的模式修建，是全球发展最快的国际化研究型大学之一。自2015年以来，KAUST教授论文人均被引用次数连续数年位列全球高校第一。KAUST有约2000名学生学者和教授，来自约100个国家，多样性世界排名第一，校园美丽紧靠温暖干净的红海，校园生活丰富多彩。关于第三代半导体材料器件的研究是KAUST发展最快的研究领域之一。

有关PI

此职位由Xiaohang Li教授和Boon Ooi教授联合招聘和指导，所以能使用两位教授组里的所有仪器包括MBE和MOCVD。两位教授均为第三代半导体科学技术的专家，多次获得研究领域上的突破和各项国际奖项并被各大媒体报道。

研究课题

The postdoctoral fellow shall conduct cutting-edge research under the supervision of Prof Boon Ooi and Prof Xiaohang Li.
The specific research topics include epitaxy, characterization, and fabrication of very interesting new semiconductor materials and devices based on MBE (mostly) and MOCVD.

职责

Conduct independent research, advise students, proposal writing, equipment maintenance, etc.

背景要求

This position requires:
Solid experience and publication record in III-nitride research (MBE experience is a plus).
Independence in research
Team worker with good communication skills.
Good professional speaking and writing English.

主要仪器

Advanced MBE system, Advanced high-temperature MOCVD system, low-temperature PL, device testing tools, state-of-the-art characterization tools including TEM, XRD, SEM, AFM, SIMS, XPS, RBS, Hall, Probe station, etc.; advanced Class-100 nanofabrication cleanroom

待遇条件

(1) 免费联体别墅或独栋别墅房间，带所有必要家具，拎包入住
(2) 免费医疗保险
(3) 免费水电宽带网
(4) 税后年薪: $50,000-63,000 USD, depending on qualification and experience
(5) 到KAUST的搬家费
(6) 每年免费回家机票
(7) 全年多次参加国际会议

开始时间

From July 2018 to October 2018.

联系方式

If interested, please email CV with names and contacts of three references to xiaohang.li@kaust.edu.sa.

我们自2017年以来所发期刊论文

1.   H. Sun et al., "HCl flow-induced phase change of α-, β- and ε-Ga2O3 films grown by MOCVD," Cryst. Growth Des. 18, 2370 (2018).
2.   K.-H. Li et al., “Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling,” J. Cryst. Growth 488, 16 (2018).
3.   J. Hou et al., “Enhanced complete photonic band gap in moderate refractive index contrast chalcogenide-air system with connected-annular-rods photonic crystals,” Photon. Res 6 (4), 282 (2018)
4.   S. Shervin et al., “Flexible Deep-Ultraviolet Light-Emitting Diodes for Significant Improvement of Quantum Efficiencies by External Bending,” J. Phys. D: Appl. Phys. 51, 105105 (2018).
5.   H. Sun et al., "Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes," ACS Photonics 5, 964 (2018).
6.   H. Sun et al., “Microstructure revealing and dislocation behavior in BAlN/AlGaN heterostructures,” Appl. Phys. Express 11, 011001 (2018).
7.   L. Yan et al., “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018)
8.   X. Sun et al., “375-nm ultraviolet-laser based non-line-of-sight underwater optical communication,” Optics Express, 26(10), 12870-12877 (2018)
9.   R. Lin et al., “Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations,” Photonics Research, 6(5), 457-462 (2018)
10.   B. Janjua et al., “Ultraviolet-A LED Based on Quantum-disks-in-AlGaN-nanowires - Optimization and Device Reliability,” IEEE Photonics Journal, PP(99), 1-10 (2018)
11.   M. Tangi et al., “Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes,” Journal of Applied Physics, 123(10), 105702, 1-8 (2018)
12.   M. Ebaid et al., “Water splitting to hydrogen over epitaxially grown InGaN nanowires on a metallic titanium/silicon template: reduced interfacial transfer resistance and improved stability to hydrogen,” Journal of Materials Chemistry A, 6(16), 6922-6930 (2018).
13.   W. G. Alheadary et al., “Free-space optical channel characterization and experimental validation in a coastal environment,” Optics Express, 26(6), 6614-6628 (2018)
14.   C. Shen et al., “Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications,” Optics Express, 26(6), A219-A226 (2018)
15.   M. S. Alias et al., “High reflectivity YDH/SiO2 distributed Bragg reflector for UV-C wavelength regime,” IEEE Photonics Journal, 10(2), 2200508, 1-8 (2018)
16.   A. Prabaswara et al., “Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer,” Nanoscale Research Letters, 13, 41, 1-9 (2018)
17.   G. Kusch et al., “Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging,” Scientific Reports, 8, 1742, 1-8 (2018)
18.   K.-T. Ho et al., “3.2 Gigabit-per-second Visible Light Communication Link with InGaN/GaN MQW Micro-photodetector,” Optics Express, 26(3), 3037-3045 (2018)
19.   R. Bose et al., “Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy,” ACS Energy Letters, 3(2), 476-481 (2018)
20.   H. Sun et al., “Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes,” ACS Photonics, 5(3), 964-970 (2018)
21.   R. T. ElAfandy et al., “Nanomembrane-Based, Thermal-Transport Biosensor for Living Cells,” Small, 13(7), 1603080, 1-7 (2017).
22.   B. Murali et al., “Temperature-Induced Lattice Relaxation of Perovskite Crystal Enhances Optoelectronic Properties and Solar Cell Performance,” Journal of Physical Chemistry Letters 8(1), 137-143 (2017).
23.   P. Mishra et al., “Impact of N-plasma and Ga-irradiation on MoS2 layer in molecular beam epitaxy,” Applied Physics Letters, 110(1), 012101, 1-5 (2017).
24.   S. P. Sarash et al., “Double Charged Surface Layers in Lead Halide Perovskite Crystals,” Nano Letters 17(3), 2021-2027 (2017).
25.   P. Varadhan et al., “Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting,” Nano Letters, 17(3), 1520-1528 (2017).
26.   M. Tangi et al., “Band Alignment at GaN/Single-Layer WSe2 Interface,” ACS Applied Materials & Interfaces, 9(10), 9110-9117 (2017).
27.   C. Shen et al., “Semipolar III-nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system,” Applied Physics Express, 10(4), 042201 (2017).
28.   H. M. Oubei et al., “Performance Evaluation of Underwater Wireless Optical Communications Links in the Presence of Different Air Bubble Populations,” IEEE Photonics Journal, 9(2), 7903009, 1-9 (2017)
29.   M. Ebaid et al., “Unbiased photocatalytic hydrogen generation from pure water on stable Ir-treated In0.33Ga0.67N nanorods,” Nano Energy, 37, 158-167 (2017)
30.   C. Zhao et al., “InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters,” RSC Advances, 7(43), 26665-26672 (2017)
31.   K.-H. Park et al., “A Novel Mirror-Aided Non-Imaging Receiver for Indoor 2×2 MIMO-Visible Light Communication Systems,” IEEE Transactions on Wireless Communications, 16(9), 5630-5643 (2017)
32.   H. M. Oubei et al., “Simple statistical channel model for weak temperature-induced turbulence in underwater wireless optical communication systems,” Optics Letters, 42(13), 2455-2458 (2017)
33.   W. Peng et al., “Ultralow Self-Doping in Two-dimensional Hybrid Perovskite Single Crystals,” Nano Letters, 17(8), 4759-4767 (2017)
34.   C. Lee et al., “Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors,” Optics Express, 25(15), 17480-17487 (2017)
35.   M. Tangi et al., “Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well,” Applied Physics Letters, 111(9), 092104, 1-5 (2017)
36.   M. S. Alias et al., “Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings,” IEEE Photonics Journal, 9(5), 4900508, 1-8 (2017)
37.   M. S. Alias et al., “Continuous-wave optically pumped green perovskite vertical-cavity surface-emitter,” Optics Letters, 42(18), 3618-3621 (2017)
38.   A. Al-Halafi et al., “Real-Time Video Transmission Over Different Underwater Wireless Optical Channels Using a Directly Modulated 520 nm Laser Diode,” Journal of Optical Communications and Networking, 9(10), 826-832 (2017)
39.   X. Sun et al., “71-Mbit/s ultraviolet-B LED communication link based on 8-QAM-OFDM modulation,” Optics Express, 25(19), 23267-23274 (2017)
40.   M. Tangi et al., “Anomalous photoluminescence thermal quenching of sandwiched single layer MoS2,” Optical Materials Express, 7(10), 3697-3705 (2017)
41.   D. Priante et al., “Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer,” Optical Materials Express, 7(12), 4214-4224 (2017)
42.   A. N. Hanna et al., “Wavy Architecture Thin-Film Transistor for Ultrahigh Resolution Flexible Displays,” Small, 1703200, 1-6 (2017)
43.   H. Sun et al., "Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes," ACS Photonics, in press.
44.   H. Sun et al., “Microstructure revealing and dislocation behavior in BAlN/AlGaN heterostructures,” Applied Physics Express 11, 011001 (2018).
45.   N. Alfaraj et al., “Thermodynamic photoinduced disorder in AlGaN nanowires,” AIP Advance 7, 125113 (2017).
46.   K. Liu et al., "Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering," Applied Physics Letter 111 (22), 222106 (2017).
47.   H. Sun et al., “Valence and conduction band offsets of β-Ga2O3/AlN heterojunction,” Applied Physics Letter 111 (16), 162105 (2017).
48.   H. Sun et al., “Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction,” Applied Physics Letter 111(12), 122106 (2017).
49.   J. Hou et al., “Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells,” Optics Express 25(20), A922-A931 (2017).
50.   H. Sun et al., “Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate,” Journal of Physics D: Applied Physics 50, 395101 (2017).
51.   S. Wang et al., “Crystal structure of BAlN thin films: effect of boron concentration in the gas flow,” Journal of Crystal Growth 475, 334 (2017).
52.   A. Prabaswarae et al., “Spatially resolved investigation of competing nanocluster emission in quantum-disks-in-nanowires structure characterized by nanoscale cathodoluminescence,” Journal of Nanophotonics 11(2), 026015 (2017).
53.   M. Zhang et al., “Structural and Electronic Properties of Wurtzite BxAl1-xN from First-Principles Calculations”, Physics Status Solidi B 254 (8), 1600749 (2017).
54.   F. Wu et al., “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D: Appl. Phys. 50, 245101 (2017).
55.   H. Sun et al., “Influence of TMAl preflow on AlN epitaxy on sapphire,” Applied Physics Letter 110, 192106 (2017).
56.   N. Alfaraj et al., “Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires,” Applied Physics Letter 110, 161110 (2017).
57.   X. Li et al., “100-nm thick single-phase wurtzite BAlN films with boron contents over 10%,” Physics Status Solidi B 254 (8), 1600699 (2017).
58.   B. Janjua et al., “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates”, Optics Express 25, 2 (2017).
59.   B. Janjua et al., “Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy,” Nanoscale 9, 7805 (2017).

KAUST招募优秀第三代半导体博士后一名！

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