Haicheng's work on Performance Enhancement of n-type AlN Schottky Barrier Diodes Using Oxygen-rich Rapid Thermal Annealing Treatment was accepted by IEEE Transactions on Electron Devices!
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Haicheng's work on Performance Enhancement of n-type AlN Schottky Barrier Diodes Using Oxygen-rich Rapid Thermal Annealing Treatment was accepted by IEEE Transactions on Electron Devices!
