Chuanju's work on highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer is accepted as a Rapid Communication for publication in the Japanese Journal of Applied Physics!
1 min read
·
About
Chuanju's work on highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer is accepted as a Rapid Communication for publication in the Japanese Journal of Applied Physics!
Please contact Prof. Li for more details.
