Advanced Semiconductor Laboratory
Developing cutting-edge technologies based on III-nitride semiconductors

Publications

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Book Chapters and Special Technical Reports
  1. Chapter Four: III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors, Vol 4, Semiconductors and Semimetals series, Elsevier. <pdf>
  2. (Editorial) "Sapphire substrates slash the cost of deep UV lasers", Compound Semiconductor Magazine, June 2016. <pdf>
  3. Chapter 16: Future Developments in MOVPE, Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications, Wiley, being edited.
Journal Papers
  1. N. Alfaraj, M. M. Muhammed, K.-H. Li, B. Janjua, R. A. Aljefri, H. Sun, T. K. Ng, B. S. Ooi, I. S. Roqan, and X. Li, “Thermodynamic photoinduced disorder in AlGaN nanowires,” under review.
  2. K.-H. Li, H. S. Alotaibi, H. Sun, R. Lin, W. Guo, C. G. Torres, K. Liu, S. V. Galan, and X. Li, “Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling,” under review.
  3. R. Lin, H. Sun, Y. Wu, N. Alfaraj, K.-H. Li, W. Guo, M. Alowayed, and X. Li, "Optical mode analysis and enhanced Q factor in stealthy hyperuniform structure," under review.
  4. H. Sun, C. G. T. Castanedo, K. Liu, K.-H. Li, and X. Li, “Valence and conduction band offsets of β-Ga2O3/AlN heterojunction,” under review.
  5. H. Sun, F. Wu, Y. J. Park, T. M. Al tahtamouni, W. Guo, N. Alfaraj, K.-H. Li, D. H. Anjum, T. Detchprohm, R. D. Dupuis, and X. Li, “Structural analysis of BAlN/AlGaN heterostructures,” under review.
  6. H. Sun, Y. Park, K.-H. Li, C. G. T. Castanedo, A. S. Alowayed, T. Detchprohm, R. D. Dupuis, and X. Li, “Band alignment of B0.14Al0.86N / Al0.7Ga0.3N heterojunction,” Appl. Phys. Lett. 111(13), 122106 (2017). <pdf>
  7. X. Sun, Z. Zhang, A. Chaaban, T. K. Ng, C. Shen, R. Chen, J. Yan, H. Sun, X. Li, J. Wang, J. Li, M.-S. Alouini, and B. S. Ooi, “71-Mbit/s Ultraviolet-B LED Communication Link based on 8-QAM-OFDM Modulation”, Opt. Express 25 (19), 23267 (2017). <pdf>
  8. J. Hou, W. Hong, X. Li, C. Yang, and S. Chen, “Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells,” Opt. Express 25(20), A922-A931 (2017). <pdf>
  9. H. Sun, F. Wu, T. M. Al tahtamouni, N. Alfaraj, K.-H. Li, T. Detchprohm, R. D. Dupuis, and X. Li, “Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate,” J. Phys. D: Appl. Phys., 50, 395101 (2017). <pdf>
  10. S. Wang, X. Li, A. M. Fischer, T. Detchprohm, R. D. Dupuis, and F. A. Ponce, “Crystal structure of BAlN thin films: effect of boron concentration in the gas flow,” J. Cryst. Growth 475, 334 (2017). <pdf>
  11. A. Prabaswara, D. Stowe, B. Janjua, T. K. Ng, D. H. Anjum, P. Longo, C. Zhao, R. T. Elafandy, X. Li, A. Alyamani, M. El-Desouki, and B. S. Ooi, “Spatially resolved investigation of competing nanocluster emission in quantum-disks-in-nanowires structure characterized by nanoscale cathodoluminescence,” J. Nanophoton., 11(2), 026015 (2017). <pdf>
  12. M. Zhang and X. Li, “Structural and Electronic Properties of Wurtzite BxAl1-xN from First-Principles Calculations”, Phys. Status Solidi B, 254 (8), 1600749 (2017). <pdf>
  13. F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D: Appl. Phys., 50, 245101 (2017). <pdf>
  14. H. Sun, F. Wu, Y. J. Park, T. M. Al tahtamouni, K.-H. Li, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li, “Influence of TMAl preflow on AlN epitaxy on sapphire,” Appl. Phys. Lett. 110, 192106 (2017). <pdf>
  15. N. Alfaraj, S. Mitra, F. Wu, I. Ajia, B. Janjua, A. Prabaswara, R. A. Aljefri, H. Sun, T. K. Ng, B. S. Ooi, I. S. Roqan, and X. Li, “Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires,” Appl. Phys. Lett. 110, 161110 (2017). <pdf>
  16. X. Li, S. Wang, H. Liu, F. A. Ponce, T. Detchprohm, R. D. Dupuis “100-nm thick single-phase wurtzite BAlN films with boron contents over 10%,” Phys. Status Solidi B 254 (8), 1600749 (2017). <pdf>
  17. B. Janjua*, H. Sun*, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates”, Opt. Express, 25, 2 (2017). <pdf>
  18. B. Janjua*, H. Sun*, C. Zhao, D. H. Anjum, F. Wu, A. A. Alhamoud, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy”, Nanoscale 9, 7805 (2017). <pdf>
  19. X. Li, H. Xie, J. H. Ryou, F. A. Ponce, T. Detchprohm, and R. D. Dupuis, “Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells,” Appl. Phys. Lett. 107, 241109 (2015). <pdf>
  20. X. Li, T. T. Kao, M. Satter, S. Wang, Y. Wei, H. Xie, S. C. Shen, P. D. Yoder, A. Fischer, and F. A. Ponce, T. Detchprohm, and R. D. Dupuis, “Demonstration of transverse-magnetic dominant deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers on sapphire substrates,” Appl. Phys. Lett. 106, 041115 (2015). <pdf>
  21. X. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, A. Fischer, and F. A. Ponce, “Temperature dependence of crystalline quality of AlN layer grown on sapphire substrate by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76-78 (2015). <pdf>
  22. X. Li, S. Wang, Y. O. Wei, H. Xie, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, A. Fischer, and F. A. Ponce, “Growth of high-quality AlN layer on sapphire substrate at relatively low temperatures by metalorganic chemical vapor deposition,” Phys. Status Solidi B 252(5), 1089 (2015). <pdf>
  23. X. Li, G. Le Gac, S. Bouchoule, Y. El Gmili, G. Patriarche, S. Sundaram, P. Disseix, F. Réveret, J. Leymarie, J. Streque, F. Genty, J-P. Salvestrini, R. D. Dupuis, X. Li, P. L. Voss, and A. Ougazzaden, “Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm,” J. Cryst. Growth 432, 37 (2015). <pdf>
  24. X. Li, T. Detchprohm, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, R. D. Dupuis, S. Wang, Y. Wei, H. Xie, A. Fischer, F. A. Ponce, T. Wernicke, C. Reich, M. Martens, and M. Kneissl, “Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates,” Appl. Phys. Lett. 105, 141106 (2014). <pdf>
  25. M. M. Satter, Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, S. C. Shen, J. H. Ryou, R. D. Dupuis, P. D. Yoder. “AlGaN-Based Vertical Injection Laser Diodes Using Inverse Tapered p-Waveguide for Efficient Hole Transport,” IEEE J. of Quantum Electron. 50, 166 (2014). <pdf>
  26. M. M. Satter, Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, S. C. Shen, J. H. Ryou, R. D. Dupuis, P. D. Yoder. “Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high power opto and microelectronic applications,” Phys. Status Solidi C 11, 828 (2014). <pdf>
  27. Y. S. Liu, Z. Lochner, T. T. Kao, M. M. Satter, X. Li, J. H. Ryou, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, Y. Wei, H. Xie, A. Fischer and F. Ponce, “Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates,” Phys. Status Solidi C 11, 258 (2014). <pdf>
  28. X. Li, P. F. Zhu, G. Y. Liu, J. Zhang, R. B. Song, Y. K. Ee, P. Kumnorkaew, and J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by using 2-D Close-Packed TiO2 Microsphere Arrays,” IEEE J. Display Technol. 9, 5, 324 (2013). <pdf>
  29. Z. Lochner, X. Li, T. T. Kao, M. Satter, H. J. Kim, S. C. Shen,  P. D. Yoder, A. Fischer, and F. A. Ponce, J. H. Ryou, and R. D. Dupuis, “Stimulated emission at 257 nm from AlGaN/AlN heterostructure on AlN substrate,” Phys. Status Solidi A 210, 9, 1768 (2013). <pdf>
  30. T. T. Kao, Y. S. Liu, M. M. Satter, X. Li, Z. Lochner, P. D. Yoder, T. Detchprohm, R. D. Dupuis, S. C. Shen, , J. H. Ryou, A. M. Fischer,Y. Wei, H. Xie, F. A. Ponce, “Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors,” Appl. Phys. Lett. 103, 211103 (2013). <pdf>
  31. Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, M. M. Satter, S. C. Shen, P. D. Yoder, J. H. Ryou, R. D. Dupuis, “Deep-Ultraviolet Lasing at 243 nm from Photo-Pumped AlGaN/AlN Heterostructure on AlN Substrate,” Appl. Phys. Lett. 102, 101110 (2013). <pdf>
  32. C. K. Tan, J. Zhang, X. Li, G. Y. Liu, B. O. Tayo, and N. Tansu, “First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters,” IEEE J. Display Technol. 9, 4, 272 (2013). <pdf>
  33. W. H. Koo, W. Youn, P. F. Zhu, X. Li, N. Tansu, and F. So, “Light extraction of organic light emitting diodes using defective hexagonal-close-packed array,” Adv. Funct. Mater. 22, 3454 (2012). <pdf>
  34. G. Y. Liu, J. Zhang, X. Li, G. S. Huang, T. Paskova, K. R. Evans, H. P. Zhao, and N. Tansu, “Metalorganic Vapor Phase Epitaxy and Characterizations of Nearly-Lattice-Matched AlInN Alloys on GaN / Sapphire Templates and Free-Standing GaN Substrates,” J. Cryst. Growth 340, 66 (2011). <pdf>
  35. W. Cao, J. Biser, Y. K. Ee, X. Li, N. Tansu, H. M. Chan, and R. P. Vinci, “Dislocation structure of GaN films grown on planar and nano-patterned sapphire,” J. Appl. Phys. 110, 053505 (2011). <pdf>
  36. X. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios,” IEEE Photon. J. 3, 3, 489 (2011). <pdf>
  37. N. Tansu, H. P. Zhao, G. Y. Liu, X. Li, J. Zhang, H. Tong, and Y. K. Ee, “Breakthrough in Photonics 2009: III-N Photonics,” IEEE Photon. J. 2, 236 (2010). <pdf>
  38. X. Li, H. Tong, H. Zhao, and N. Tansu, “Band Structure Calculation of Dilute-As GaNAs by First Principle,” in Proc. of the SPIE Photonics West 2010, Physics and Simulation of Optoelectronics Devices XVIII, San Francisco, CA, United States, Jan 2010. <pdf>
  39. Y. K. Ee, X. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE Nucleation Studies of III-Nitride Light-Emitting Diodes on Nano-Patterned Sapphire,” J. Crys. Growth 312, 1311 (2010). <pdf>
  40. H. Zhao, G. Liu, X. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Design and Characteristics of Staggered InGaN Quantum Well Light-Emitting Diodes in Green Spectral Regimes” IET Optoelectron. 3, 283 (2009). <pdf>
  41. H. P. Zhao, G. Y. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Growths of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at 520-525 nm Employing Graded Growth-Temperature Profile,” Appl. Phys. Lett. 95, 061104, (2009). <pdf>
Works Featured in Media
    1. “Researchers Reveal Secrets of Metalorganic Preflow for AlN MOCVD Process,” Compound Semiconductor     https://www.compoundsemiconductor.net/article/101482-researchers-reveal-secrets-of-metalorganic-preflow-for-aln-mocvd-process.html
    2. “Faculty Focus: Xiaohang Li,” KAUST News                                                                                                      https://www.kaust.edu.sa/en/news/faculty-focus-xiaohang-li
    3. “KAUST Team Reveals Thermodynamic Disorder In GaN Nanowires,” Compound Semiconductor        https://www.compoundsemiconductor.net/article/101402-kaust-team-reveals-thermodynamic-disorder-in-gan-based-nanowires.html
    4. “Researchers Simplify Fabrication Of Nanowire UV-LEDs On Silicon,” Compound Semiconductor            https://www.compoundsemiconductor.net/article/101173-researchers-simplify-fabrication-of-nanowire-uv-leds-on-silicon.html
    5. “UV LEDs: solving the droop issue,” EE Times Europe                                                                          http://www.electronics-eetimes.com/news/uv-leds-solving-droop-issue
    6. “KAUST Team Grows Droop-Free UVLEDs On Metal/Silicon Substrate,” Compound Semiconductor        https://www.compoundsemiconductor.net/article/100915-kaust-team-grows-droop-free-uvleds-on-metalsilicon-substrate.html
    7. “Growing thicker, more boron rich BAlN,” Compound Semiconductor        https://www.compoundsemiconductor.net/article/100877-growing-thicker,-more-boron-rich-baln.html
    8. “Sapphire substrates slash the cost of deep UV lasers,” Editorial of Compound Semiconductor        http://www.compoundsemiconductor.net/pdf/magazines/2016/june2016.pdf
    9. “CloudSolar Helps Renewable Energy Fans Who Can’t Install Their Own Solar Panels,” Techcrunch          http://techcrunch.com/2015/03/26/cloudsolar/
    10. “Startup selling solar panels ‘in the cloud,’ not on your roof,” Boston Globe        https://www.bostonglobe.com/business/2015/03/06/startup-selling-solar-panels-cloud-not-your-roof/ZIlSLORzszmpm0nwYRoyFM/story.html
    11. “Ga Tech Team Demonstrates Deep UV Lasers On Sapphire,” Compound Semiconductor                            http://www.compoundsemiconductor.net/article/95412-georgia-tech-team-demonstrates-deep-uv-lasers-on-sapphire.html
    12. “Graduate Student Fellowship 2014 Award Winners,” covered by IEEE        http://photonicssociety.org/newsletters/oct14/Careers-Fellowship.pdf
    13. “Guest Blog: UV LED for Revolutionizing Water Purification,” Edison Innovation Foundation                                     http://www.edisonmuckers.org/uv-led-for-revolutionizing-water-purification/
    14. “Graduate Engineering Student Make Strong Showing at GT Research and Innovation Conference,” School of Engineering of Georgia Tech        http://www.coe.gatech.edu/news/graduate-engineering-students-make-strong-showing-gt-research-and-innovation-conference
    15. “SPIE announces 2013 scholarship recipients,” SPIE                                                                           http://spie.org/about-spie/press-room/press-releases/2013-spie-scholarships-7-19-2013
    16. “Xiaohang Li Tapped for Prestigious SPIE Scholarship,” Georgia Tech                    https://www.ece.gatech.edu/news/215541/xiaohang-li-tapped-prestigious-spie-scholarship
    17. “2012 Winning Companies,” Lehigh University                              
    Conference Presentations and Proceedings
    1. (Invited Talk) X. Li, “AlN growth and AlGaN deep UV lasers on sapphire,” XIX International Workshop on the Physics of Semiconductor Devices (IWPSD), Delhi, India, December 2017.
    2. (Invited Talk) X. Li, “Latest progress on B-III-N alloy & impact of TMA preflow on AlN MOVPE,” International Workshop on UV Materials and Devices (IWUMD-2017), Fukuoka, Japan, November 2017.
    3. (Invited Talk) X. Li, “AlGaN deep UV lasers and BAlN alloys,” the 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS), Qingdao, China, September 2017.
    4. (Invited Talk) X. Li, “Growth modes of AlN and B-III-N materials,” National Wide Bandgap Material Conference, Xining, China, August 2017.
    5. (Invited Talk) X. Li, “Research on B-III-N alloys and AlGaN deep UV lasers on sapphire,” SPIE Optics + Photonics, San Diego, CA, United States, August 2017.
    6. H. Sun, F. Wu, T. M. Al tahtamouni, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li, "Study of TMAl-induced carbon impurity on AlN film polarity and growth mode on sapphire," 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 2017.
    7. S. Wang, X. Li, A. M. Fischer, T. Detchprohm, R. D. Dupuis, and F. A. Ponce, " Crystal structure of BAlN thin films: effect of boron concentration in the gas flow," 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 2017.
    8. N. Alfaraj, S. Mitra, F. Wu, I. A. Ajia, B. Janjua, A. Prabaswara, R. A. Aljefri, H. Sun, T. K. Ng, B. S. Ooi, I. S. Roqan, and X. Li, "Modeling and investigation of photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires," 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 2017.
    9. H. Sun, F. Wu, T. M. Al tahtamouni, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li, "Structural Properties and Growth Modes of MOCVD-Grown AlN with TMAl Pretreatment of Sapphire Substrate," 59th Electronic Material Conference (EMC), South Bend, IN, United States, June 2017.
    10. H. Sun, F. Wu, T. M. Al tahtamouni, D. H. Anjum, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li, "Investigation of Microstructure, Strain and Defect of BAlN/Al(Ga)N Heterostructures," 59th Electronic Material Conference (EMC), South Bend, IN, United States, June 2017.
    11. N. Alfaraj, S. Mitra, F. Wu, I. A. Ajia, B. Janjua, A. Prabaswara, R. A. Aljefri, H. Sun, T. K. Ng, B. S. Ooi, I. S. Roqan, and X. Li, "Photoinduced thermodynamic behavior in InGaN/GaN double-heterostructure nanowires," 59th Electronic Material Conference (EMC), South Bend, IN, United States, June 2017.
    12. (Invited Talk) X. Li, “AlGaN Deep UV Lasers and B-III-N Alloys,” 9th International Conference on Materials for Advanced Technologies (ICMAT 2017), Singapore, June 2017.
    13. H. Sun, F. Wu, Y. J, Park, T. M. Al tahtamouni, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li, "Control of polarity, crystal quality and growth mode of AlN films by MOCVD," 17th European Workshop on Metal-Organic Vapour Phase Epitaxy (EW-MOVPE 17), Grenoble, France, June 2017.
    14. H. Sun, F. Wu, T. M. Al tahtamouni, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li, " Structural characterizations of high B-content BAlN/Al(Ga)N heterostructures grown by MOCVD," 17th European Workshop on Metal-Organic Vapour Phase Epitaxy (EW-MOVPE 17), Grenoble, France, June 2017.
    15. K.-H. Li, H. S. Alotaibi, and X. Li, "A study of thermal uniformity on induction-heated susceptor for MOCVD," 17th European Workshop on Metal-Organic Vapour Phase Epitaxy (EW-MOVPE 17), Grenoble, France, June 2017.
    16. K.-H. Li, H. S. Alotaibi, and X. Li, " High-temperature MOCVD reactor design," 17th European Workshop on Metal-Organic Vapour Phase Epitaxy (EW-MOVPE 17), Grenoble, France, June 2017.
    17. (Invited Talk) X. Li, “III-nitride deep UV materials and devices,” KAUST-NSF Conference on Electronic Materials, Devices and Systems, Thuwal, KAUST, Saudi Arabia, January 2017.
    18. (Invited Talk) X. Li, “Collaboration opportunities in III-nitride materials and devices,” KACST-CNRS Workshop, Riyadh, Saudi Arabia, November 2016.
    19. F. Wu, J. Dai, Z. C. Feng, C. Chen, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm,” International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, United States, October 2016.
    20. X. Li, S. Wang, H. Liu, F. A. Ponce, T. Detchprohm, and R. D. Dupuis, “100-nm Thick Single-Phase Wurtzite BAlN with B Contents up to 14.4% Grown by MOCVD,” International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, United States, October 2016.
    21. N. Alfaraj, R. Aljefri, M. Baier, D. Priante, B. Janjua, A. Prabaswara, T. K. Ng, B. S. Ooi, F. Laquai, and X. Li, “Effective surface passivation of InGaN/GaN nanowires studied by photoluminescence and photothermal deflection spectroscopy,” International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, United States, October 2016.
    22. (Invited Talk) X. Li, “AlGaN Deep UV Lasers on Sapphire Substrates Grown by MOCVD,” International Workshop on UV Materials and Devices (IWUMD), Beijing, China, July 2016.
    23. (Late News) K. H. Li*, N. Alfaraj*, M. S. Alias*, T. K. Ng, B. S. Ooi, T. Detchprohm, R. D. Dupuis, and X. Li, “Refractive index measurement of single-crystalline wurtzite BAlN with Boron contents up to 11.6%”, 2016 International Conference on Metalorganic Vapor Phase Deposition (ICMOVPE), San Diego, CA, United States, July 2016.
    24. X. Li, S. Wang, H. Liu, F. A. Ponce, T. Detchprohm, and R. D. Dupuis, “100-nm Single-Phase Wurtzite BAlN with B Contents up to 7.2% Grown by MOVPE,” International Conference on Metalorganic Vapor Phase Deposition (ICMOVPE), San Diego, USA, July 2016.
    25. (Late News) F. Wu, J. Dai, Z. C. Feng, C. Chen, and X. Li, “Strong enhancement in internal quantum efficiency of GaN/AlGaN multiple quantum wells emitting at ~350 nm,” Electronic Material Conference (EMC), Newark, DE, United States, June 2016.
    26. X. Li, S. Wang, H. Liu, F. A. Ponce, T. Detchprohm, and R. D. Dupuis, “Single-Phase Wurtzite BAlN with 7.2%-B Contents Grown by MOCVD,” Electronic Material Conference (EMC), Newark, DE, United States, June 2016.
    27. X. Li, S. Wang, H. Liu, F. A. Ponce, T. Detchprohm, and R. D. Dupuis, “Growth of single-phase wurtzite BAlN with relatively large thicknesses and high B contents by metalorganic chemical vapor deposition,” in Proc. of the SPIE Photonics West 2016, Gallium Nitride Materials and Devices XI, San Francisco, CA, United States, Feb 2016.
    28. (Invited Talk) X. Li, “III-nitride deep UV laser,” KAUST-NSF Conference on Electronic Materials, Devices and Systems for a Sustainable Future, Thuwal, KAUST, Saudi Arabia, Mar 2016.
    29. (Invited Talk) X. Li, T. Detchprohm, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, R. D. Dupuis, S. Wang, Y. Wei, H. Xie, A. Fischer, F. A. Ponce, T. Wernicke, C. Reich, M. Martens, and M. Kneissl, “III-nitride deep UV laser on sapphire substrate,” IEEE Photonics Conference, Reston, VA, United States, Oct 2015.
    30. (Invited Talk) X. Li, T. Detchprohm, Y. S. Liu, R. D. Dupuis, T. T. Kao, Saniul Haq, S. C. Shen, K.  Mehta, P. D. Yoder, S. Wang, Y. O. Wei, H. Xie, A. M. Fischer, F. A Ponce, T. Wernicke, C. Reich, M. Martens, M. Kneissl, “Optically pumped low-threshold UV lasers,” IEEE Summer Topicals Meeting Series (SUM), Nassau, Bahamas, July 2015
    31. (Late News) X. Li, S. Wang, H. Liu, F. A. Ponce, T. Detchprohm, and R. D. Dupuis, “High quality wurtzite BAlN with high B content by metalorganic chemical vapor deposition,” Electronic Material Conference (EMC), Columbus, OH, United States, June 2015.
    32. (Invited Talk) R. D. Dupuis, X. Li, T. Detchprohm, Y. S. Liu, T. T. Kao, S. C. Shen, M. Satter, P. D. Yoder, S. Wang, Y. Wei, H. Xie, A. Fischer, F. A. Ponce, T. Wernicke, C. Reich, M. Martens, and M. Kneissl, “Optically-pumped low-threshold Deep UV Lasers Grown on Sapphire Substrates,” in Proc. of the SPIE Photonics West 2015, Gallium Nitride Materials and Devices V, San Francisco, CA, United States, Feb 2015.
    33. X. Li, T. Detchprohm, Y. S. Liu, T. T. Kao, M. Satter, S. C. Shen,  P. D. Yoder, S. Wang, Y. Wei, H. Xie, A. Fischer, F. A. Ponce, and R. D. Dupuis, “Low-threshold stimulated emission from AlGaN-based lasers grown on sapphire substrates,” Materials Research Society (MRS) Fall Meeting, Boston, MA, United States, Nov-Dec 2014.
    34.  (Invited Talk) R. D. Dupuis, X. Li, Y. S. Liu, T. Detchprohm, T. T. Kao, S. C. Shen, M. Satter,  P. D. Yoder, S. Wang, Y. Wei, H. Xie, A. Fischer, F. A. Ponce, T. Wernicke, C. Reich, M. Martens, and M. Kneissl, “Low-threshold Deep UV Lasers Grown on Sapphire Substrates,” International Workshop on Nitride Semiconductors (IWN), Warsaw, Poland, August 2014.
    35. J. D. Justice, X. Li, T. Detchprohm, R. D. Dupuis, H. Kim, J. M. Zuo, Z. Lin, and Y. H. Zhang, “Properties of InAs/InAsSb Type-II superlattices Grown on GaSb by MOCVD,” International Conference on Metalorganic Vapor Phase Deposition (ICMOVPE), Lausanne, Switzerland, July 2014.
    36.  (Late News) X. Li, T. Detchprohm, Y. S. Liu, R. D. Dupuis, T. T. Kao, S. C. Shen, M. Satter,  P. D. Yoder, S. Wang, Y. Wei, H. Xie, A. Fischer, F. A. Ponce, T. Wernicke, C. Reich, M. Martens, and M. Kneissl, “Low-threshold Deep UV Lasers Grown on Sapphire Substrates,” International Workshop on Nitride Semiconductors (IWN), Wroclaw, Poland, Aug 2014.
    37. X. Li, T. Detchprohm, Y. S. Liu, T. T. Kao, M. Satter, S. C. Shen,  P. D. Yoder, S. Wang, Y. Wei, H. Xie, A. Fischer, and F. A. Ponce, and R. D. Dupuis, “High Quality AlN/Sapphire Template Grown by Relatively Low-Temperature Metalorganic-Chemical-Vapor Deposition,” International Workshop on Nitride Semiconductors (IWN), Wroclaw, Poland, Aug 2014.
    38. (Late News) X. Li, T. Detchprohm, Y. S. Liu, T. T. Kao, M. Satter, S. C. Shen,  P. D. Yoder, S. Wang, Y. Wei, H. Xie, A. Fischer, F. A. Ponce, and R. D. Dupuis, “Room-temperature low-threshold deep-ultraviolet stimulated emission from AlGaN heterostructures grown on sapphire substrates,” OptoElectronics and Communications Conference and Australian Conference on Optical Fibre Technology (OECC/ACOFT), Melbourne, Australia, July 2014.
    39. (Late News) X. Li, T. Detchprohm, Y. S. Liu, T. T. Kao, M. Satter, S. C. Shen,  P. D. Yoder, S. Wang, Y. Wei, H. Xie, A. Fischer, F. A. Ponce, and R. D. Dupuis, “Low-threshold stimulated emission at 239nm-270nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates at room temperature,” International Conference on Metalorganic Vapor Phase Deposition (ICMOVPE), Lausanne, Switzerland, July 2014.
    40. X. Li, T. Detchprohm, Y. S. Liu, T. T. Kao, M. Satter, S. C. Shen,  P. D. Yoder, S. Wang, Y. Wei, H. Xie, A. Fischer, F. A. Ponce, and R. D. Dupuis, “Growth of High Quality AlN/Sapphire Template Low-Temperature Metalorganic-Chemical-Vapor Deposition,” International Conference on Metalorganic Vapor Phase Deposition (ICMOVPE), Lausanne, Switzerland, July 2014.
    41. X. Li, T. Detchprohm, Y. S. Liu, and R. D. Dupuis, “High Quality AlN/Sapphire Template Grown by Low-Temperature Metalorganic-Chemical-Vapor Deposition,” The 5th International Symposium on Growth of III-Nitrides (ISGN-5), Atlanta, GA, United States, May 2014.
    42. Y. S. Liu, T. T. Kao, M. Satter, X. Li, S.-C. Shen, P. D. Yoder, T. Detchprohm, Y. Wei, H. Xie, A. Fischer, F. A. Ponce, and R. D. Dupuis, "Optically Pumped AlGaN-Based Ultraviolet Laser Grown by Metalorganic Chemical Vapor Deposition with Distributed Bragg Reflector Facet Coating," International Conference on Metalorganic Vapor Phase Deposition (ICMOVPE), Lausanne, Switzerland, July 2014.
    43. Y. S. Liu, T. T Kao, Z. Lochner, X. Li, M. Satter, S.-C. Shen, P. D. Yoder, T. Detchprohm and R. D. Dupuis, "Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition," presented in SPIE Photonics West, San Francisco, CA, United States, February 2014.
    44. Y. S. Liu, T. T. Kao, Z. Lochner, X. Li, M. Satter, J.-H. Ryou, S.-C. Shen, P.D. Yoder, T. Detchprohm, R. D. Dupuis, Y. Wei, H. Xie, A. Fischer, and F. Ponce, "Low-threshold optically pumped AlGaN based Deep-ultraviolet multi-quantum-well laser grown by MOCVD on AlN substrates," presented in the 10th International Conference on Nitride Semiconductors, Washington, D.C., August 2013.
    45. Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, M. M. Satter, S. C. Shen, P. D. Yoder, J. H. Ryou, R. D. Dupuis, Y. Wei, H. Xie, A. Fische, and F A. Ponce, “Optically pumped AlGaN quantum-well lasers at ~243.5 nm grown by MOCVD on AlN substrates,” E-MRS 2013 Spring Meeting, Strasbourg, France, May 2013.
    46. X. Li, Z. Lochner, Y. S. Liu, T. T. Kao, M. Satter, J. H. Ryou, S. C. Shen, D. Yoder, R. D Dupuis, Y. Wei, H. Xie, A. Fischer, and F. Ponce, “Stimulated Emission at 256.1 nm with a Low Threshold Optical Pumping Power density from AlGaN Multiple Quantum Well grown at High Temperature on Sapphire,” 10th International Conference on Nitride Semiconductors (ICNS), Washington, D.C., United States, August 2013.
    47. Z. Lochner, X. Li, Y.-S. Liu, T.-T. Kao, M. Satter, J.-H. Ryou, S.-C. Shen, P.D. Yoder, T. Detchprohm, R. D. Dupuis, Y. Wei, H. Xie, A. Fischer, and F. Ponce, "Stimulated emission at 256.1 nm with a low threshold optical pumping power density from AlGaN multiple quantum well grown at high-temperature on sapphire," 10th International Conference on Nitride Semiconductors (ICNS), Washington, D.C., United States, August 2013.
    48. X. Li, Z. Lochner, Y. S. Liu, T. T. Kao, M. Satter, J. H. Ryou, S. C. Shen, D. Yoder, R. D Dupuis, Y. Wei, H. Xie, A. Fischer, and F. Ponce, “Growth and Characterization of AlxGa1-xN (x≥0.6) on Sapphire Substrates using High Growth Temperature by Metalorganic Chemical Vapor Deposition,” The 16th U.S. Biennial Workshop on Organometallic Vapor Phase Epitaxy, Keystone, CO, United States, July 2013.
    49. X. Li, Z. Lochner, Y. S. Liu, T. T. Kao, M. Satter, J. H. Ryou, S. C. Shen, D. Yoder, R. D Dupuis, Y. Wei, H. Xie, A. Fischer, and F. Ponce, “Growth of High Al-Content AlGaN on AlN/ Sapphire Templates by High-Temperature Metalorganic-Chemical-Vapor Deposition,” Electronic Material Conference, South Bend, IN, United States, June 2013.
    50. R. D. Dupuis, Z. Lochner, X. Li, J.-H. Ryou, T. Kao, S.-C. Shen, P. D. Yoder, M. Satter, A. Fisher and F. Ponce, "Room-temperature optically pumped AlGaN/AlN multiple quantum well lasers operating at < 260 nm grown by metalorganic chemical vapor deposition," presented in the 2013 SPIE Photonics West Conference, San Francisco, CA, United States, February 2013. 
    51. Z. Lochner, X. Li, T. T. Kao, Y. S. Liu, M. M. Satter, S. C. Shen, P. D. Yoder, J. H. Ryou, R. D. Dupuis, Y. Wei, H. Xie, A. Fischer, and F A. Ponce, “Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at <260nm grown by metalorganic chemical vapor deposition,” in Proc. of the SPIE Photonics West 2010, Gallium Nitride Materials and Devices V, San Francisco, CA, United States, February 2013.
    52. C. K. Tan, J. Zhang, X. Li, G. Y. Liu, and N. Tansu, “Dilute-As GaNAs Semiconductor for Visible Emitters,” Proc. of the IEEE Photonics Conference 2012, Burlingame, CA, United States, September 2012.
    53. Z. Lochner, X. Li, H. J. Kim, Y. Zhang, S. Choi, S. C. Shen, J. H. Ryou, and Russell D. Dupuis, “High Power and RF Characterizations of III-Nitride Heterojunction Bipolar Transistors on Free-Standing GaN Substrates,” Electronic Material Conference, State College, PA, United States, June 2012.
    54. W. Koo, W. Youn, X. Li, R. B. Song, N. Tansu, and F. So, “Light extraction from organic light emitting diodes by silica microsphere array pattern,” Proc. of the SPIE Optics + Photonics 2011, The 11th International Conference on Solid State Lighting, vol. 8115, paper 8115-57, San Diego, CA, United States, August 2011.
    55. W. Youn, W. Koo, X. Li, N. Tansu, and F. So, “Organic light emitting diodes with Silica/polystyrene diffraction grating for improved out-coupling efficiency,” Florida Energy Systems Consortium 2011, Gainesville, FL, United States, Sep 2011.
    56. X. Li, Y. K. Ee, R. Song, and N. Tansu, “Fabrication of Self-Assembled Silica / Polystyrene Microlens Arrays for Light Extraction Enhancement in Nitride Light-Emitting Diodes” in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, United States, May 2011.
    57. X. Li, Y. K. Ee, R. Song, and N. Tansu, “Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO2 microsphere arrays” in Proc. of the SPIE Photonics West 2011, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, San Francisco, CA, United States, January 2011. 
    58. X. Li, S. Dutta, T. Krentz, T. B. Kim, R. P. Vinci, N. Tansu and H. M. Chan, “MOCVD GaN Growth on Vermicular, Sol-Gel Derived Sapphire Coatings,” Molmat 2010, Montpellier, France, July 2010.
    59. X. Li, Y. K. Ee, G. Y. Liu, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “MOCVD Epitaxy of GaN by Employing SiO2 Colloidal Microsphere Templates,” in Proc. of the American Physical Society (APS) Annual March Meeting 2010, Portland, Oregon, United States, March 2010.
    60. Y. K. Ee, X. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Growth Evolution and Time-Resolved Measurements of III-Nitride Light-Emitting Diodes Grown by Abbreviated Growth Mode on Patterned AGOG Substrate,” in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2010, San Jose, CA, United States, May 2010.
    61. (Invited Talk) H. P. Zhao, G. Y. Liu, X. Li, Y. K. Ee, H. Tong, J. Zhang, G. S. Huang, and N. Tansu,  “Novel Growth and Device Concepts for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes,” in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2010, San Jose, CA, United States, May 2010. 
    62. S. Dutta, T. Krentz, X. Li, T. B. Kim, R. P. Vinci, H. M. Chan, and N. Tansu, “Microstructural evolution of alumina sol-gel coatings on sapphire,” ACerS Sosman Award Symposium:  Sol-Gel Fundamentals and Applications, Materials Science & Technology 2010, Houston, TX, United States, October 2010.
    63. (Invited Talk) N. Tansu, H. P. Zhao, G. Y. Liu, X. Li, J. Zhang, H. Tong, G. S. Huang, and Y. K. Ee, "Novel Device Concepts and Growths for High-Efficiency III-Nitride Light-Emitting Diodes," in Proc. of the International Union of Materials Research Societies - International Conference on Electronic Materials (IUMRS-ICEM) 2010, Seoul, Korea, August 2010. 
    64. (Invited Talk) H. P. Zhao, J. Zhang, G. Y. Liu, X. Li, Y. K. Ee, H. Tong, T. Toma, G. S. Huang, and N. Tansu,  “Approaches for  High-Efficiency InGaN Quantum Wells Light-Emitting Diodes” in Proc. of the American Vacuum Society Meeting, Ann-Arbor, MI, United States, May 2010. 
    65. (Invited Talk) N. Tansu, H. Zhao, Y. K. Ee, G. Liu, X. Li, and G. S. Huang, “Novel Device Concept for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes,” in Proc. of the SPIE Photonics West 2010, Gallium Nitride Materials and Devices V, San Francisco, CA, United States, January 2010. 
    66. (Invited Talk) N. Tansu, H. Zhao, Y. K. Ee, G. Liu, X. Li, J. Zhang, S. F. Zhang, and G. S. Huang, “Novel Growth and Device Concepts for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes,” in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2010, San Jose, CA, United States,May 2010. 
    67. Y. K. Ee, X. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Reduced Dislocation Engineering and Improved Efficiency of III-Nitride Light Emitting Diodes Grown on Nano-Patterned Sapphire using Abbreviated GaN Metalorganic Vapor Phase Epitaxy Growth Mode,” in Proc. of the 14th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) 2009, Lake Geneva, WI, United States, August 2009.
    68. H. Zhao, G. Liu, X. Li, G. S. Huang, S. Tafon Penn, V. Dierolf, and N. Tansu, “Staggered InGaN Quantum Wells Light-Emitting Diodes at 520-nm Employing Graded Temperature Growths,” in Proc. of the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, United States, May 2009 .
    69. H. Zhao, G. S. Huang, G. Liu, X. Li, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Characteristics of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at 480-525 nm,” in Proc. of the 67th IEEE Device Research Conference (DRC) 2009, University Park, PA, United States, June 2009.
    70. (Invited Talk) N. Tansu, H. P. Zhao, R. A. Arif, Y. K. Ee, G. Y. Liu, X. Li, and G. S. Huang, “Polarization Engineering of InGaN-Based Nanostructures for Low-Threshold Diode Lasers and High-Efficiency Light Emitting Diodes,” Proc. of the IEEE Photonics Global 2008, Nanophotonics Symposium, Singapore, Republic of Singapore, December 2008.
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