Advanced Semiconductor Laboratory
Developing cutting-edge technologies based on the 3rd-generation semiconductors

Publications

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Book Chapters and Special Technical Reports
  1. III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors, Volume 96, Semiconductors and Semimetals series, Elsevier. <link>
  2. "Sapphire substrates slash the cost of deep UV lasers", Editorial of Compound Semiconductor Magazine, June 2016. <pdf>
  3. Future Developments in MOVPE, Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications, Wiley, being edited.
  4. Ultraviolet Lasers, Nanoscale Semiconductor Lasers, Elsevier, being edited.
Journal Papers
  1. N. Alfaraj, M. Alawein, D. Priante, B. Janjua, H. Sun, W. Alghamdi, M. Baier, I. A. Ajia, S. Mitra, I. S. Roqan, F. Laquai, T. K. Ng, B. S. Ooi, and X. Li*, "Photothermal and photoluminescent behaviors of group III-nitride nanowires: Sub-bandgap absorption and Heisenberg's fundamental limit," under review.
  2. J. Hou, B. Yang, X. Li, B. Wang, H. Long, C. Yang, and S. Chen, "Design efficient and stable thin film crystalline silicon solar cell by introducing rotation factor in the surface square-pillar-array-grating," under review.
  3. Z. Ren, Y. Lu, H. Sun, H.-H. Yao, C.-H. Liao, J. Dai, C. Chen, J.-H. Ryou, J. Yan, J. Wang, J. Li, and X. Li*, “Electron-Blocking-Layer-Free Deep Ultraviolet Light-Emitting Diodes with Linearly Graded AlGaN Quantum Barriers,” under review.
  4. K.-H. Li, H.-H. Yao, H. S. Alotaibi, and X. Li*, “Improvement of temperature uniformity of induction-heated susceptor for high-temperature MOVPE,” under review.
  5. B. R. Tak, M. Garg, Carlos G. Torres-Castanedo, V. Gupta, X. Li, and R. Singh, "High Temperature Performance of β-Ga2O3 Based MSM Solar Blind Photodetectors," under review.
  6. J. Dai, J. Chen, S. Wang, J. Zhang, F. Wu, H. Long, R. Liang, H. Kuo, W. Zhang, Y. He, X. Li, and C. Chen, "Ultraviolet polarized light emitting and detecting dual-functioning device based on nonpolar n-ZnO/i-ZnO/p-AlGaN heterojunction," under review.
  7. K.-H. Li, C. G. Torres-Castanedo, S. Sandaram, H. Sun, L. Braic, M. N. Hedhili, A. Ougazzaden, and X. Li*, "Very large conduction and valence band offsets of β-Ga2O3/h-BN heterojunction," under review.
  8. D. Priante, M. Tangi, J.-W. Min, N. Alfaraj, J.-W. Liang, H. Sun, H. H. Alhashim, X. Li, A. M. Albadri, A. Y. Alyamani, T. K. Ng, and B. S. Ooi, “Enhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes,” under review. 
  9. W. Guo, M. Sheikhi, J. Jiang, H. Sun, H. Jiang, K. Tian, Z.-H. Zhang, X. Li, and J. Ye, "Enhanced ultraviolet luminescence from AlGaN/GaN multiple quantum wells with lateral III- and N-polar domains," under review.
  10. K. Liu, F. AlQatari, H. Sun, and X. Li*, "Polarization properties of wurtzite III nitride indicates the principle of polarization engineering," under review.
  11. W. Guo, H. Sun, K. Liu, J. Li, and X. Li*, "Significant performance enhancement of blue and UV LED by applying BAlN electron blocking layer," under review.
  12. R. Lin, V. Mazzone, N. Alfaraj, X. Li*, and A. Fratalocchi, " Controlling nanolaser arrays via stealthy hyperuniform structures," under review.
  13. C. G. Torres-Castanedo, K.-H. Li, L. Braic, M. N. Hedhili, H. Sun, and X. Li*, "Determination of the band offsets of β-Ga2O3/FTO junction," under review.
  14. M. Garg, T. Naik, R. Pathak, V. R. Rao, C.-H. Liao, K.-H. Li, H. Sun, X. Li, and R. Singh, "Surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-Porphyrin based organic molecules," J. Appl. Phys. 124, 195702 (2018). <pdf>
  15. H. Sun, Y. J. Park, K.-H. Li, X. Liu, T. Detchprohm, X. Zhang, R. D. Dupuis, and X. Li*, “Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application,” Appl. Surf. Sci. 458, 949 (2018). <pdf>
  16. H. Sun, D. Priante, J.-W. Min, R. C. Subedi, M. K. Shakfa, Z. Ren, K.-H. Li, R. Lin, C. Zhao, T. Ng, J.-H. Ryou, X. Zhang, B. S. Ooi, and X. Li, "Graded-Index Separated Confinement Heterostructure AlGaN Nanowires: Towards Ultraviolet Laser Diodes Implementation," ACS Photonics, 5, 3305 (2018). <pdf>
  17. S. Singh, S. Shervin, H. Sun, M. Yarali, J. Chen, R. Lin, K.-H. Li, X. Li, J.-H. Ryou, A. Mavrokefalos, "Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films," ACS Appl. Mater. Inter. 10, 20085 (2018). <pdf>
  18. W. Guo, H. Sun, B. Torre, J. Li, M. Sheikhi, J. Jiang, H. Li, S. Guo, K.-H. Li, A. Giugni, E. D. Fabrizio, X. Li, and J. Ye, "Lateral-Polarity-Structure of AlGaN Quantum Wells: A Promising Approach for Enhancing the Ultraviolet Luminescence," Adv. Funct. Mater. 28, 1802395 (2018). <pdf>
  19. L. Yan, Y. Zhang, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, and J.-F. Song, “Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 112, 182104 (2018). <pdf>
  20. R. Lin, S. V. Galan, H. Sun, Y. Hu, M. S. Alias, B. Janjua, T. K. Ng, B. S. Ooi, and X. Li*, “Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations,” Photon. Res. 6, 124 (2018). <pdf>
  21. H. Sun, K.-H. Li, C. G. T. Castanedo, S. Okur, G. S. Tompa, T. Salagaj, S. Lopatin, A. Genovese, and X. Li, "HCl flow-induced phase change of α-, β- and ε-Ga2O3 films grown by MOCVD," Cryst. Growth Des. 18, 2370 (2018). <pdf>
  22. K.-H. Li, H. S. Alotaibi, H. Sun, R. Lin, W. Guo, C. G. Torres, K. Liu, S. V. Galan, and X. Li, “Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling,” J. Cryst. Growth 488, 16 (2018). <pdf>
  23. J. Hou, C. Yang, X. Li, Z.-Z. Cao, and S. Chen, “Enhanced complete photonic band gap in moderate refractive index contrast chalcogenide-air system with connected-annular-rods photonic crystals,” Photon. Res 6 (4), 282 (2018). <pdf>
  24. S. Shervin, S. K. Oh, H. J. Park, K.-H. Lee, M. Asadirad, S.-H. Kim, J. Kim, S. Pouladi, S.-N. Lee, X. Li, J. S. Kwak, and J. H. Ryou “Flexible Deep-Ultraviolet Light-Emitting Diodes for Significant Improvement of Quantum Efficiencies by External Bending,” J. Phys. D: Appl. Phys. 51, 105105 (2018). <pdf>
  25. H. Sun, M. K. Shakfa, M. Mufasila, B. Janjua, K.-H. Li, R. Lin, I. Roqan,  B. Ooi, and X. Li, "Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes," ACS Photonics 5, 964 (2018). <pdf>
  26. H. Sun, F. Wu, Y. J. Park, T. M. Al tahtamouni, W. Guo, N. Alfaraj, K.-H. Li, D. H. Anjum, T. Detchprohm, R. D. Dupuis, and X. Li, “Microstructure revealing and dislocation behavior in BAlN/AlGaN heterostructures,” Appl. Phys. Express 11, 011001 (2018). <pdf>
  27. N. Alfaraj, M. M. Muhammed, K.-H. Li, B. Janjua, R. A. Aljefri, H. Sun, T. K. Ng, B. S. Ooi, I. S. Roqan, and X. Li, “Thermodynamic photoinduced disorder in AlGaN nanowires,” AIP Adv. 7, 125113 (2017). <pdf>
  28. K. Liu, H. Sun, F. AlQatari, W. Guo, X. Liu, J. Li, C. G T. Castanedo, and X. Li, "Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering," Appl. Phys. Lett. 111 (22), 222106 (2017). <pdf>
  29. H. Sun, C. G. T. Castanedo, K. Liu, K.-H. Li, W. Guo, R. Lin, X. Liu, J. Li, and X. Li, “Valence and conduction band offsets of β-Ga2O3/AlN heterojunction,” Appl. Phys. Lett. 111 (16), 162105 (2017). <pdf>
  30. H. Sun, Y. Park, K.-H. Li, C. G. T. Castanedo, A. S. Alowayed, T. Detchprohm, R. D. Dupuis, and X. Li, “Band alignment of B0.14Al0.86N / Al0.7Ga0.3N heterojunction,” Appl. Phys. Lett. 111 (12), 122106 (2017). <pdf>
  31. X. Sun, Z. Zhang, A. Chaaban, T. K. Ng, C. Shen, R. Chen, J. Yan, H. Sun, X. Li, J. Wang, J. Li, M.-S. Alouini, and B. S. Ooi, “71-Mbit/s Ultraviolet-B LED Communication Link based on 8-QAM-OFDM Modulation”, Opt. Express 25 (19), 23267 (2017). <pdf>
  32. J. Hou, W. Hong, X. Li, C. Yang, and S. Chen, “Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells,” Opt. Express 25(20), A922-A931 (2017). <pdf>
  33. H. Sun, F. Wu, T. M. Al tahtamouni, N. Alfaraj, K.-H. Li, T. Detchprohm, R. D. Dupuis, and X. Li, “Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate,” J. Phys. D: Appl. Phys. 50, 395101 (2017). <pdf>
  34. S. Wang, X. Li, A. M. Fischer, T. Detchprohm, R. D. Dupuis, and F. A. Ponce, “Crystal structure of BAlN thin films: effect of boron concentration in the gas flow,” J. Cryst. Growth 475, 334 (2017). <pdf>
  35. A. Prabaswara, D. Stowe, B. Janjua, T. K. Ng, D. H. Anjum, P. Longo, C. Zhao, R. T. Elafandy, X. Li, A. Alyamani, M. El-Desouki, and B. S. Ooi, “Spatially resolved investigation of competing nanocluster emission in quantum-disks-in-nanowires structure characterized by nanoscale cathodoluminescence,” J. Nanophoton. 11(2), 026015 (2017). <pdf>
  36. M. Zhang and X. Li, “Structural and Electronic Properties of Wurtzite BxAl1-xN from First-Principles Calculations”, Phys. Status Solidi B, 254 (8), 1600749 (2017). <pdf>
  37. F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D: Appl. Phys. 50, 245101 (2017). <pdf>
  38. H. Sun, F. Wu, Y. J. Park, T. M. Al tahtamouni, K.-H. Li, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li, “Influence of TMAl preflow on AlN epitaxy on sapphire,” Appl. Phys. Lett. 110, 192106 (2017). <pdf>
  39. N. Alfaraj, S. Mitra, F. Wu, I. Ajia, B. Janjua, A. Prabaswara, R. A. Aljefri, H. Sun, T. K. Ng, B. S. Ooi, I. S. Roqan, and X. Li, “Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires,” Appl. Phys. Lett. 110, 161110 (2017). <pdf>
  40. X. Li, S. Wang, H. Liu, F. A. Ponce, T. Detchprohm, R. D. Dupuis “100-nm thick single-phase wurtzite BAlN films with boron contents over 10%,” Phys. Status Solidi B 254 (8), 1600699 (2017). <pdf>
  41. B. Janjua*, H. Sun*, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates”, Opt. Express 25, 2 (2017). <pdf>
  42. B. Janjua*, H. Sun*, C. Zhao, D. H. Anjum, F. Wu, A. A. Alhamoud, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, “Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy”, Nanoscale 9, 7805 (2017). <pdf>
  43. X. Li, H. Xie, J. H. Ryou, F. A. Ponce, T. Detchprohm, and R. D. Dupuis, “Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells,” Appl. Phys. Lett. 107, 241109 (2015). <pdf>
  44. X. Li, T. T. Kao, M. Satter, S. Wang, Y. Wei, H. Xie, S. C. Shen, P. D. Yoder, A. Fischer, and F. A. Ponce, T. Detchprohm, and R. D. Dupuis, “Demonstration of transverse-magnetic dominant deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers on sapphire substrates,” Appl. Phys. Lett. 106, 041115 (2015). <pdf>
  45. X. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, A. Fischer, and F. A. Ponce, “Temperature dependence of crystalline quality of AlN layer grown on sapphire substrate by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76-78 (2015). <pdf>
  46. X. Li, S. Wang, Y. O. Wei, H. Xie, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, A. Fischer, and F. A. Ponce, “Growth of high-quality AlN layer on sapphire substrate at relatively low temperatures by metalorganic chemical vapor deposition,” Phys. Status Solidi B 252(5), 1089 (2015). <pdf>
  47. X. Li, G. Le Gac, S. Bouchoule, Y. El Gmili, G. Patriarche, S. Sundaram, P. Disseix, F. Réveret, J. Leymarie, J. Streque, F. Genty, J-P. Salvestrini, R. D. Dupuis, X. Li, P. L. Voss, and A. Ougazzaden, “Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm,” J. Cryst. Growth 432, 37 (2015). <pdf>
  48. X. Li, T. Detchprohm, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, R. D. Dupuis, S. Wang, Y. Wei, H. Xie, A. Fischer, F. A. Ponce, T. Wernicke, C. Reich, M. Martens, and M. Kneissl, “Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates,” Appl. Phys. Lett. 105, 141106 (2014). <pdf>
  49. M. M. Satter, Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, S. C. Shen, J. H. Ryou, R. D. Dupuis, P. D. Yoder. “AlGaN-Based Vertical Injection Laser Diodes Using Inverse Tapered p-Waveguide for Efficient Hole Transport,” IEEE J. of Quantum Electron. 50, 166 (2014). <pdf>
  50. M. M. Satter, Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, S. C. Shen, J. H. Ryou, R. D. Dupuis, P. D. Yoder. “Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high power opto and microelectronic applications,” Phys. Status Solidi C 11, 828 (2014). <pdf>
  51. Y. S. Liu, Z. Lochner, T. T. Kao, M. M. Satter, X. Li, J. H. Ryou, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, Y. Wei, H. Xie, A. Fischer and F. Ponce, “Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates,” Phys. Status Solidi C 11, 258 (2014). <pdf>
  52. X. Li, P. F. Zhu, G. Y. Liu, J. Zhang, R. B. Song, Y. K. Ee, P. Kumnorkaew, and J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by using 2-D Close-Packed TiO2 Microsphere Arrays,” IEEE J. Display Technol. 9, 5, 324 (2013). <pdf>
  53. Z. Lochner, X. Li, T. T. Kao, M. Satter, H. J. Kim, S. C. Shen,  P. D. Yoder, A. Fischer, and F. A. Ponce, J. H. Ryou, and R. D. Dupuis, “Stimulated emission at 257 nm from AlGaN/AlN heterostructure on AlN substrate,” Phys. Status Solidi A 210, 9, 1768 (2013). <pdf>
  54. T. T. Kao, Y. S. Liu, M. M. Satter, X. Li, Z. Lochner, P. D. Yoder, T. Detchprohm, R. D. Dupuis, S. C. Shen, , J. H. Ryou, A. M. Fischer,Y. Wei, H. Xie, F. A. Ponce, “Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors,” Appl. Phys. Lett. 103, 211103 (2013). <pdf>
  55. Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, M. M. Satter, S. C. Shen, P. D. Yoder, J. H. Ryou, R. D. Dupuis, “Deep-Ultraviolet Lasing at 243 nm from Photo-Pumped AlGaN/AlN Heterostructure on AlN Substrate,” Appl. Phys. Lett. 102, 101110 (2013). <pdf>
  56. C. K. Tan, J. Zhang, X. Li, G. Y. Liu, B. O. Tayo, and N. Tansu, “First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters,” IEEE J. Display Technol. 9, 4, 272 (2013). <pdf>
  57. W. H. Koo, W. Youn, P. F. Zhu, X. Li, N. Tansu, and F. So, “Light extraction of organic light emitting diodes using defective hexagonal-close-packed array,” Adv. Funct. Mater. 22, 3454 (2012). <pdf>
  58. G. Y. Liu, J. Zhang, X. Li, G. S. Huang, T. Paskova, K. R. Evans, H. P. Zhao, and N. Tansu, “Metalorganic Vapor Phase Epitaxy and Characterizations of Nearly-Lattice-Matched AlInN Alloys on GaN / Sapphire Templates and Free-Standing GaN Substrates,” J. Cryst. Growth 340, 66 (2011). <pdf>
  59. W. Cao, J. Biser, Y. K. Ee, X. Li, N. Tansu, H. M. Chan, and R. P. Vinci, “Dislocation structure of GaN films grown on planar and nano-patterned sapphire,” J. Appl. Phys. 110, 053505 (2011). <pdf>
  60. X. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios,” IEEE Photon. J. 3, 3, 489 (2011). <pdf>
  61. N. Tansu, H. P. Zhao, G. Y. Liu, X. Li, J. Zhang, H. Tong, and Y. K. Ee, “Breakthrough in Photonics 2009: III-N Photonics,” IEEE Photon. J. 2, 236 (2010). <pdf>
  62. X. Li, H. Tong, H. Zhao, and N. Tansu, “Band Structure Calculation of Dilute-As GaNAs by First Principle,” Proc. of the SPIE Photonics West 7597, 75970H1 (2010). <pdf>
  63. Y. K. Ee, X. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE Nucleation Studies of III-Nitride Light-Emitting Diodes on Nano-Patterned Sapphire,” J. Crys. Growth 312, 1311 (2010). <pdf>
  64. H. Zhao, G. Liu, X. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Design and Characteristics of Staggered InGaN Quantum Well Light-Emitting Diodes in Green Spectral Regimes” IET Optoelectron. 3, 283 (2009). <pdf>
  65. H. P. Zhao, G. Y. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Growths of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at 520-525 nm Employing Graded Growth-Temperature Profile,” Appl. Phys. Lett. 95, 061104, (2009). <pdf>
Works Featured in Media
    1. "Reducing the loss of light at the surface of semiconductor nanostructures," Phys.org
    2. "KAUST And SMI Show One-step Tuning Of Gallium Oxide Phases," Compound Semiconductor
    3. "Cleaning nanowires to get out more light," KAUST Discovery
    4. "Fine tuning boron content in nitride alloys," Semiconductor Today
    5. "Taking control at the junction," KAUST Discovery
    6. KAUST Team Cleans Nanowires For More Efficient UVLEDs,” Compound Semiconductor
    7. "KAUST/Georgia Tech team determines band alignment at BAlN/AlGaN heterojunction," Semiconductor Today
    8. KAUST Predicts Polarisation-free III-nitride Heterojunctions On C-plane,” Compound Semiconductor
    9. Researchers Determine Electronic Properties of Interface Between Two Wide Bandgap Semiconductors,” AZO Materials
    10. Semiconductors with an aligned interface,” Phys.org & KAUST Discovery & Nanowerk
    11. Researchers Discover Unique BAlN Properties,” Compound Semiconductor
    12. KAUST Team Reports Record-breaking UV LED Comms,” Compound Semiconductor
    13.  “Keeping the heat out,” KAUST Discovery
    14. Researchers Reveal Secrets Of Metalorganic Preflow For AlN MOCVD Process,” Compound Semiconductor     
    15. Faculty Focus: Xiaohang Li,” KAUST News                                                                                                      
    16. KAUST Team Reveals Thermodynamic Disorder In GaN-based Nanowires,” Compound Semiconductor   
    17. Thermodynamic disorder in GaN-based nanowires,” Nanowerk     
    18. Researchers Simplify Fabrication Of Nanowire UV-LEDs On Silicon,” Compound Semiconductor            
    19. UV LEDs: solving the droop issue,” EE Times Europe                                                                           
    20. KAUST Team Grows Droop-Free UVLEDs On Metal/Silicon Substrate,” Compound Semiconductor        
    21. Growing thicker, more boron rich BAlN,” Compound Semiconductor        
    22. Sapphire substrates slash the cost of deep UV lasers,” Editorial of Compound Semiconductor                                                                           
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