Advanced Semiconductor Laboratory
Developing cutting-edge technologies based on III-nitride semiconductors


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Our group is dedicated to innovating growth, fabrication, simulation of III-nitride structures for next-generation devices. Our research activities are highly interdisciplinary. They involve electrical engineering, applied physics, material science, chemical engineering and other related disciplines.

The devices of particular interest include laser, LED, solar cells, transistors, and sensors etc. Because of excellent properties of III-nitrides, these devices are expected to become the enabling technologies to revolutionize energy, communication, biochemical, biomedical, and data storage industries and many others. In addition, those devices share highly similar experimental and simulation platforms. This allows us to achieve breakthroughs efficiently. 

Below are a few examples of our current and past exciting research activities. Join us today! The PDF files of the publications are in the "Publications" webpage.

1. Fundamental studies of epitaxial process
  • H. Sun et al., “Influence of TMAl preflow on AlN epitaxy on sapphire,” Appl. Phys. Lett. 110, 192106 (2017).
​In collaboration with Prof Russell Dupuis at Georgia Tech

2. Thermodynamic studies of III-nitride semiconductors
  • N. Alfaraj et al., “Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires,” Appl. Phys. Lett. 110, 161110 (2017).
​In collaboration with Profs Iman Roqan and Boon Ooi at KAUST

3. Theoretical and experimental investigations of novel materials

  • M. Zhang and X. Li, “Structural and Electronic Properties of Wurtzite BxAl1-xN from First-Principles Calculations”, Phys. Status Solidi B, in press: DOI: 10.1002/pssb.201600749 (2017).
  • X. Li et al., “100-nm thick single-phase wurtzite BAlN films with boron contents over 10%,” Phys. Status Solidi B (2017): 10.1002/pssb.201600699.
​In collaboration with Prof Russell Dupuis at Georgia Tech and Prof Fernando Ponce at ASU

4. Engineering of strain field in nanostructures
  • F. Wu et al., “Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design,” J. Phys. D: Appl. Phys., 50, 245101 (2017).
​In collaboration with Profs Changqing Chen and Jiangnan Dai at HUST, and Prof Iman Roqan at KAUST

5. Demonstration of novel nanowire UV LED


  • B. Janjua*, H. Sun* et al., “Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates”, Opt. Express, 25, 2 (2017).
  • B. Janjua*, H. Sun* et al., “Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy”, Nanoscale, DOI: 10.1039/C7NR00006E (2017).
​In collaboration with Prof Boon Ooi at KAUST

6. High quality AlN epitaxy

  • X. Li et al., “Growth of high-quality AlN layer on sapphire substrate at relatively low temperatures by metalorganic chemical vapor deposition,” Phys. Status Solidi B 252, 2 (2015).
  • X. Li et al., “Temperature dependence of crystalline quality of AlN layer grown on sapphire substrate by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76-78 (2015).
​Conducted with Prof Russell Dupuis at Georgia Tech and Prof Fernando Ponce at ASU​​

7. Demonstration of state-of-the-art deep UV thin-film laser
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  • X. Li et al., “Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates,” Appl. Phys. Lett. 105, 141106 (2014).
  • X. Li et al., “Demonstration of transverse-magnetic dominant deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers on sapphire substrates,” Appl. Phys. Lett. 106, 041115 (2015).
  • X. Li et al, “Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells,” Appl. Phys. Lett. 107, 241109 (2015). ​
​Conducted with Prof Russell Dupuis at Georgia Tech

8. Light extraction of LED and OLED
  • X. Li et al., “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios,” IEEE Photon. J. 3, 3, 489 (2011).
  • W. H. Koo et al., “Light extraction of organic light emitting diodes using defective hexagonal-close-packed array,” Adv. Funct. Mater. 22, 3454 (2012).
  • X. Li et al., “Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by using 2-D Close-Packed TiO2 Microsphere Arrays,” IEEE J. Display Technol. 9, 5, 324 (2013).
​Conducted with Prof Nelson Tansu at Lehigh
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