Advanced Semiconductor Laboratory
Developing cutting-edge technologies based on III-nitride semiconductors

Haiding's paper on TMAl pretreatment for AlN growth gets accepted by Journal of Physics D: Applied Physics!

Haiding's paper on TMAl pretreatment for AlN growth gets accepted by Journal of Physics D: Applied Physics!

8/8/2017
​​​​​​​Please contact Prof Li for more info​.​​