Advanced Semiconductor Laboratory
Developing cutting-edge technologies based on III-nitride semiconductors

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Monthly Archives: August 2016

Seven reasons why group-III-nitride semiconductors have emerged as the materials of choice for optoelectronic as well as for high-temperature and high-power electronic devices

Nasir Alfaraj - August 30, 2016

​Seven reasons why group-III-nitride semiconductors have emerged as the materials of choice for optoelectronic as well as for high-temperature and high-power electronic devices​​​​​​

Organic Semiconductors and Organic Photovoltaics

Renad A AlJefri - August 30, 2016

Organic solar cells and panels have the potential to make solar to electricity conversion widely available and accessible to humankind.​

UV water purification

Hamad Al-Otaibi - August 29, 2016

​Water supplies in Saudi Arabia are very scarce due to the lack of rains and rivers in the kingdom. 50% of the drinking water comes from seawater desalination and around 40% comes from the non-recovered underground water.​​

(III+V)/2=IV

Ronghui Lin - August 26, 2016

​Graphene is a peculiar material that continuously attracts the attention of the science community. It has a unique two dimension structure in which each carbon atoms are connected with 3 neighboring carbon atoms with σ bonds, forming a series of hexagonal structures in the plane. ​​​

Polarity of group-III nitrides

Feng Wu - August 25, 2016

For the group-III nitrides grown by MOCVD, it is well known that nitridation before the deposition is beneficial to the improvement of structural and optical properties of nitride layers. While the chemical processes of the nitridation step are studied in detail, very little and contradictory work is presented on structural aspects that mediate polarity. ​
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